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Title: Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations

Authors:
ORCiD logo [1];  [2];  [3]; ORCiD logo [4];  [5]
  1. Applied Physics Program, University of Michigan, 450 Church St, Ann Arbor, Michigan 48109, USA
  2. Electrical Engineering and Computer Science Department, University of Michigan, 1301 Beal Ave, Ann Arbor, Michigan 48109, USA
  3. Department of Physics, Temple University, 1925 N. 12th St, Philadelphia, Pennsylvania 19122, USA
  4. Applied Physics Program, University of Michigan, 450 Church St, Ann Arbor, Michigan 48109, USA, Electrical Engineering and Computer Science Department, University of Michigan, 1301 Beal Ave, Ann Arbor, Michigan 48109, USA
  5. Materials Science and Engineering Department, University of Michigan, 2300 Hayward St, Ann Arbor, Michigan 48109, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1389106
Grant/Contract Number:
AC02-05CH11231
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 11; Related Information: CHORUS Timestamp: 2018-02-14 19:07:17; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Jones, Christina M., Teng, Chu-Hsiang, Yan, Qimin, Ku, Pei-Cheng, and Kioupakis, Emmanouil. Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations. United States: N. p., 2017. Web. doi:10.1063/1.5002104.
Jones, Christina M., Teng, Chu-Hsiang, Yan, Qimin, Ku, Pei-Cheng, & Kioupakis, Emmanouil. Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations. United States. doi:10.1063/1.5002104.
Jones, Christina M., Teng, Chu-Hsiang, Yan, Qimin, Ku, Pei-Cheng, and Kioupakis, Emmanouil. Mon . "Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations". United States. doi:10.1063/1.5002104.
@article{osti_1389106,
title = {Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations},
author = {Jones, Christina M. and Teng, Chu-Hsiang and Yan, Qimin and Ku, Pei-Cheng and Kioupakis, Emmanouil},
abstractNote = {},
doi = {10.1063/1.5002104},
journal = {Applied Physics Letters},
number = 11,
volume = 111,
place = {United States},
year = {Mon Sep 11 00:00:00 EDT 2017},
month = {Mon Sep 11 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on September 11, 2018
Publisher's Accepted Manuscript

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

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