Interfaces in coexisting metals and Mott insulators

doi:10.1103/PhysRevB.95.205126

Title: Interfaces in coexisting metals and Mott insulators

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Authors:: Lee, Juho; Yee, Chuck-Hou

Publication Date:: Mon May 01 00:00:00 EDT 2017

Research Org.:: Energy Frontier Research Centers (EFRC) (United States). Center for Emergent Superconductivity (CES)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

OSTI Identifier:: 1388909

DOE Contract Number:: AC02-98CH10886

Resource Type:: Journal Article

Resource Relation:: Journal Name: Physical Review B; Journal Volume: 95; Journal Issue: 20; Related Information: CES partners with Brookhaven National Laboratory (BNL); Argonne National Laboratory; University of Illinois, Urbana-Champaign; Los Alamos National Laboratory

Country of Publication:: United States

Language:: English

Subject:: phonons, thermal conductivity, energy storage (including batteries and capacitors), superconductivity, defects, spin dynamics

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                    Lee, Juho, and Yee, Chuck-Hou. Interfaces in coexisting metals and Mott insulators.  United States: N. p., 2017. 
        Web.  doi:10.1103/PhysRevB.95.205126.

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                    Lee, Juho, & Yee, Chuck-Hou. Interfaces in coexisting metals and Mott insulators.  United States.  doi:10.1103/PhysRevB.95.205126.

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                    Lee, Juho, and Yee, Chuck-Hou. Mon .  
        "Interfaces in coexisting metals and Mott insulators".  United States.  
        doi:10.1103/PhysRevB.95.205126.

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@article{osti_1388909,

  title        = {Interfaces in coexisting metals and Mott insulators},

  author       = {Lee, Juho and Yee, Chuck-Hou},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.95.205126},

  journal      = {Physical Review B},

  number       = 20,

  volume       = 95,

  place        = {United States},

  year         = {Mon May 01 00:00:00 EDT 2017},

  month        = {Mon May 01 00:00:00 EDT 2017}

}

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DOI: 10.1103/PhysRevB.95.205126

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Interfaces in coexisting metals and Mott insulators

Lee, Juho ; Yee, Chuck-Hou - Physical Review B
DOI: 10.1103/PhysRevB.95.205126
Electronic properties of NiS{sub 2{minus}x}Se{sub x} single crystals: From magnetic Mott-Hubbard insulators to normal metals

Honig, J.M. ; Spalek, J. - Chemistry of Materials

The NiS{sub 2{minus}x}Se{sub x} system represents one of the best examples of a Mott-Hubbard system, i.e., a system in which, under appropriate conditions of concentration, temperature, or pressure, a metal-insulator transition driven by electron-electron interaction takes place. Here, the metallic phase is either antiferromagnetic (for 0.44 {le} x {le} 1) or paramagnetic (for x {ge} 1), whereas the insulating phase is as a rule antiferromagnetic (including the spin-canted phases). In this paper the authors review both the physical properties and outline the basic features of the theoretical approach to those correlated electron systems. Emphasis is placed on a qualitative understandingmore »« less
DOI: 10.1021/cm9803509
Coexisting pseudogap, charge-transfer-gap, and Mott-gap energy scales in the resonant inelastic x-ray scattering spectra of electron-doped cuprate superconductors

Basak, Susmita ; Das, Tanmoy ; Lin, Hsin ; ... - Physical Review B
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Electronic structure of Mott insulators. [Insulating gap, local moment, effective spin Hamiltonian]

Brandow, B.H. - Adv. Phys.; (United States)

Mott insulators are identified here with ordinary magnetic insulators. The insulating gap, local moment, and effective spin hamiltonian aspects are qualitatively explained by means of a novel set of solutions of the Hartree-Fock equations. The apparent conflict between Bloch's theorem and localized-electron phenomenology is thereby resolved in an elementary manner. This Hartree-Fock approach also sheds considerable light on the physical mechanisms responsible for the associated metal-insulator (Mott) and other related phase transitions, as observed in V/sub 2/O/sub 3/ and several other materials. With some generalizations and refinements, this theoretical picture is shown to also account semiquantitatively for a number ofmore »« less
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Testing the gauge model of doped Mott Insulators

Schofield, A.J. ; Wheatley, J.M. - Bulletin of the American Physical Society

One of the unresolved issues in the understanding of the Cuprate Superconductors is the theory of their unusual normal state properties. One of the more promising developments in their understanding is the gauge model of doped Mott Insulators where the charge degrees of freedom are coupled to the chiral fluctuations of the spins. Here the authors study the consequences of this coupling via numerical tests to determine whether it can account for anomalous properties such as the diamagnetic response and the temperature dependence of the Hall coefficient.