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Title: Computational insight into the capacitive performance of graphene edge planes

Authors:
; ; ; ORCiD logo
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Fluid Interface Reactions, Structures and Transport Center (FIRST)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1388622
DOE Contract Number:
ERKCC61
Resource Type:
Journal Article
Resource Relation:
Journal Name: Carbon; Journal Volume: 116; Journal Issue: C; Related Information: FIRST partners with Oak Ridge National Laboratory (lead); Argonne National Laboratory; Drexel University; Georgia State University; Northwestern University; Pennsylvania State University; Suffolk University; Vanderbilt University; University of Virginia
Country of Publication:
United States
Language:
English
Subject:
catalysis (heterogeneous), solar (fuels), energy storage (including batteries and capacitors), hydrogen and fuel cells, electrodes - solar, mechanical behavior, charge transport, materials and chemistry by design, synthesis (novel materials)

Citation Formats

Zhan, Cheng, Zhang, Yu, Cummings, Peter T., and Jiang, De-en. Computational insight into the capacitive performance of graphene edge planes. United States: N. p., 2017. Web. doi:10.1016/j.carbon.2017.01.104.
Zhan, Cheng, Zhang, Yu, Cummings, Peter T., & Jiang, De-en. Computational insight into the capacitive performance of graphene edge planes. United States. doi:10.1016/j.carbon.2017.01.104.
Zhan, Cheng, Zhang, Yu, Cummings, Peter T., and Jiang, De-en. 2017. "Computational insight into the capacitive performance of graphene edge planes". United States. doi:10.1016/j.carbon.2017.01.104.
@article{osti_1388622,
title = {Computational insight into the capacitive performance of graphene edge planes},
author = {Zhan, Cheng and Zhang, Yu and Cummings, Peter T. and Jiang, De-en},
abstractNote = {},
doi = {10.1016/j.carbon.2017.01.104},
journal = {Carbon},
number = C,
volume = 116,
place = {United States},
year = 2017,
month = 5
}
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  • The bias-enhanced nucleation of diamond on Si(100) is studied by angle-dependent x-ray absorption near-edge spectroscopy (XANES). During diamond nucleation, a graphitic phase is also detected. The angle dependence of the XANES signal shows that the graphitic basal planes are oriented perpendicular to the surface. Implications of this result on the mechanism of bias-enhanced nucleation are discussed.{copyright} {ital 1998 American Institute of Physics.}