skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Amorphous oxides as electron transport layers in Cu(In,Ga)Se 2 superstrate devices: Amorphous oxides in Cu(In,Ga)Se 2 superstrate devices

Authors:
 [1];  [2];  [2];  [2];  [2];  [1];  [1];  [2];  [2]
  1. Helmholtz-Zentrum Berlin für Materialien und Energie, Schwarzschildstraße 3 12489 Berlin Germany
  2. National Renewable Energy Laboratory, Golden CO 80401 USA
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1388577
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Journal Article
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Volume: 214; Journal Issue: 5; Related Information: CNGMD partners with National Renewable Energy Laboratory (lead); Colorado School of Mines; Harvard University; Lawrence Berkeley National Laboratory; Massachusetts Institute of Technology; Oregon State University; SLAC National Accelerator Laboratory; Journal ID: ISSN 1862-6300
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solar (fuels), solid state lighting, phonons, thermoelectric, hydrogen and fuel cells, defects, charge transport, optics, materials and chemistry by design, synthesis (novel materials)

Citation Formats

Heinemann, M. D., van Hest, M. F. A. M., Contreras, M., Perkins, J. D., Zakutayev, A., Kaufmann, C. A., Unold, T., Ginley, D. S., and Berry, J. J. Amorphous oxides as electron transport layers in Cu(In,Ga)Se 2 superstrate devices: Amorphous oxides in Cu(In,Ga)Se 2 superstrate devices. United States: N. p., 2017. Web. doi:10.1002/pssa.201600870.
Heinemann, M. D., van Hest, M. F. A. M., Contreras, M., Perkins, J. D., Zakutayev, A., Kaufmann, C. A., Unold, T., Ginley, D. S., & Berry, J. J. Amorphous oxides as electron transport layers in Cu(In,Ga)Se 2 superstrate devices: Amorphous oxides in Cu(In,Ga)Se 2 superstrate devices. United States. doi:10.1002/pssa.201600870.
Heinemann, M. D., van Hest, M. F. A. M., Contreras, M., Perkins, J. D., Zakutayev, A., Kaufmann, C. A., Unold, T., Ginley, D. S., and Berry, J. J. Fri . "Amorphous oxides as electron transport layers in Cu(In,Ga)Se 2 superstrate devices: Amorphous oxides in Cu(In,Ga)Se 2 superstrate devices". United States. doi:10.1002/pssa.201600870.
@article{osti_1388577,
title = {Amorphous oxides as electron transport layers in Cu(In,Ga)Se 2 superstrate devices: Amorphous oxides in Cu(In,Ga)Se 2 superstrate devices},
author = {Heinemann, M. D. and van Hest, M. F. A. M. and Contreras, M. and Perkins, J. D. and Zakutayev, A. and Kaufmann, C. A. and Unold, T. and Ginley, D. S. and Berry, J. J.},
abstractNote = {},
doi = {10.1002/pssa.201600870},
journal = {Physica Status Solidi. A, Applications and Materials Science},
issn = {1862-6300},
number = 5,
volume = 214,
place = {United States},
year = {2017},
month = {2}
}

Works referenced in this record:

Electrical and optical properties of Ga2O3/CuGaSe2 heterojunction photoconductors
journal, January 2014


Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide
journal, August 1994


Advanced electrical simulation of thin film solar cells
journal, May 2013


Oxygen deficiency and Sn doping of amorphous Ga 2 O 3
journal, January 2016

  • Heinemann, M. D.; Berry, J.; Teeter, G.
  • Applied Physics Letters, Vol. 108, Issue 2
  • DOI: 10.1063/1.4938473

High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
journal, January 2005

  • Chiang, H. Q.; Wager, J. F.; Hoffman, R. L.
  • Applied Physics Letters, Vol. 86, Issue 1
  • DOI: 10.1063/1.1843286

Cu(In,Ga)Se 2 superstrate solar cells: prospects and limitations : Cu(In,Ga)Se
journal, August 2014

  • Heinemann, Marc Daniel; Efimova, Varvara; Klenk, Reiner
  • Progress in Photovoltaics: Research and Applications, Vol. 23, Issue 10
  • DOI: 10.1002/pip.2536

Dopant activation in Sn-doped Ga 2 O 3 investigated by X-ray absorption spectroscopy
journal, December 2015

  • Siah, S. C.; Brandt, R. E.; Lim, K.
  • Applied Physics Letters, Vol. 107, Issue 25
  • DOI: 10.1063/1.4938123

The Importance of Sodium Control in CIGSe Superstrate Solar Cells
journal, January 2015


Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment
journal, November 2010

  • Klein, Andreas; Körber, Christoph; Wachau, André
  • Materials, Vol. 3, Issue 11
  • DOI: 10.3390/ma3114892

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells
journal, June 2015

  • Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen
  • Proceedings of the National Academy of Sciences, Vol. 112, Issue 26
  • DOI: 10.1073/pnas.1508578112

Development of Cu(In,Ga)Se2 superstrate devices with alternative buffer layers
journal, December 2016


( In x Ga 1 x ) 2 O 3 alloys for transparent electronics
journal, August 2015


Ga2O3 segregation in Cu(In, Ga)Se2/ZnO superstrate solar cells and its impact on their photovoltaic properties
journal, February 2002


Advantageous light management in Cu(In,Ga)Se2 superstrate solar cells
journal, June 2016


Oxygen vacancies and donor impurities in β-Ga2O3
journal, October 2010

  • Varley, J. B.; Weber, J. R.; Janotti, A.
  • Applied Physics Letters, Vol. 97, Issue 14
  • DOI: 10.1063/1.3499306

Cu(In,Ga)Se<sub>2</sub> Solar Cells With Amorphous Oxide Semiconducting Buffer Layers
journal, May 2015

  • Koida, Takashi; Kamikawa-Shimizu, Yukiko; Yamada, Akimasa
  • IEEE Journal of Photovoltaics, Vol. 5, Issue 3
  • DOI: 10.1109/JPHOTOV.2015.2396356