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Title: Coexistence of Weyl physics and planar defects in the semimetals TaP and TaAs

Abstract

We report a structural study of the Weyl semimetals TaAs and TaP, utilizing diffraction and imaging techniques, where we show that they contain a high density of defects, leading to nonstoichiometric single crystals of both semimetals. Despite the observed defects and nonstoichiometry on samples grown using techniques already reported in the literature, de Haas–van Alphen measurements on TaP reveal quantum oscillations and a high carrier mobility, an indication that the crystals are of quality comparable to those reported elsewhere. Electronic structure calculations on TaAs reveal that the position of the Weyl points relative to the Fermi level shift with the introduction of vacancies and stacking faults. In the case of vacancies the Fermi surface becomes considerably altered, while the effect of stacking faults on the electronic structure is to allow the Weyl pockets to remain close to the Fermi surface. The observation of quantum oscillations in a nonstoichiometric crystal and the persistence of Weyl fermion pockets near the Fermi surface in a crystal with stacking faults point to the robustness of these quantum phenomena in these materials.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [1];  [1];  [1];  [1];  [1];  [2];  [1]
  1. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
  2. Univ. of Missouri, Columbia, MO (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1388445
Alternate Identifier(s):
OSTI ID: 1259579
Grant/Contract Number:  
SC0001299; FG02-09ER46577; SC0008832; SC0002613
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 93; Journal Issue: 24; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; solar (photovoltaic); solar (thermal); solid state lighting; phonons; thermal conductivity; thermoelectric; defects; mechanical behavior; charge transport; spin dynamics; materials and chemistry by design; optics; synthesis (novel materials); synthesis (self-assembly); synthesis (scalable processing)

Citation Formats

Besara, T., Rhodes, D. A., Chen, K. -W., Das, S., Zhang, Q. R., Sun, J., Zeng, B., Xin, Y., Balicas, L., Baumbach, R. E., Manousakis, E., Singh, D. J., and Siegrist, T. Coexistence of Weyl physics and planar defects in the semimetals TaP and TaAs. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.93.245152.
Besara, T., Rhodes, D. A., Chen, K. -W., Das, S., Zhang, Q. R., Sun, J., Zeng, B., Xin, Y., Balicas, L., Baumbach, R. E., Manousakis, E., Singh, D. J., & Siegrist, T. Coexistence of Weyl physics and planar defects in the semimetals TaP and TaAs. United States. doi:10.1103/PhysRevB.93.245152.
Besara, T., Rhodes, D. A., Chen, K. -W., Das, S., Zhang, Q. R., Sun, J., Zeng, B., Xin, Y., Balicas, L., Baumbach, R. E., Manousakis, E., Singh, D. J., and Siegrist, T. Mon . "Coexistence of Weyl physics and planar defects in the semimetals TaP and TaAs". United States. doi:10.1103/PhysRevB.93.245152. https://www.osti.gov/servlets/purl/1388445.
@article{osti_1388445,
title = {Coexistence of Weyl physics and planar defects in the semimetals TaP and TaAs},
author = {Besara, T. and Rhodes, D. A. and Chen, K. -W. and Das, S. and Zhang, Q. R. and Sun, J. and Zeng, B. and Xin, Y. and Balicas, L. and Baumbach, R. E. and Manousakis, E. and Singh, D. J. and Siegrist, T.},
abstractNote = {We report a structural study of the Weyl semimetals TaAs and TaP, utilizing diffraction and imaging techniques, where we show that they contain a high density of defects, leading to nonstoichiometric single crystals of both semimetals. Despite the observed defects and nonstoichiometry on samples grown using techniques already reported in the literature, de Haas–van Alphen measurements on TaP reveal quantum oscillations and a high carrier mobility, an indication that the crystals are of quality comparable to those reported elsewhere. Electronic structure calculations on TaAs reveal that the position of the Weyl points relative to the Fermi level shift with the introduction of vacancies and stacking faults. In the case of vacancies the Fermi surface becomes considerably altered, while the effect of stacking faults on the electronic structure is to allow the Weyl pockets to remain close to the Fermi surface. The observation of quantum oscillations in a nonstoichiometric crystal and the persistence of Weyl fermion pockets near the Fermi surface in a crystal with stacking faults point to the robustness of these quantum phenomena in these materials.},
doi = {10.1103/PhysRevB.93.245152},
journal = {Physical Review B},
issn = {2469-9950},
number = 24,
volume = 93,
place = {United States},
year = {2016},
month = {6}
}

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    Works referencing / citing this record:

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