Thermoelectric Properties of n-type ZrNiPb-Based Half-Heuslers

Mao, Jun; Zhou, Jiawei; Zhu, Hangtian; Liu, Zihang; Zhang, Hao; He, Ran; Chen, Gang; Ren, Zhifeng

doi:10.1021/acs.chemmater.6b04898

Title: Thermoelectric Properties of n-type ZrNiPb-Based Half-Heuslers

Journal Article · Tue Jan 10 00:00:00 EST 2017 · Chemistry of Materials

DOI:https://doi.org/10.1021/acs.chemmater.6b04898· OSTI ID:1388433

^[1]; Zhou, Jiawei ^[2]; Zhu, Hangtian ^[1]; Liu, Zihang ^[3]; Zhang, Hao ^[1]; He, Ran ^[1]; Chen, Gang ^[2];

^[1]

Univ. of Houston, TX (United States)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Harbin Inst. of Technology (China); Univ. of Houston, TX (United States)

Here we investigate the half-Heusler ZrNiPb as a n-type thermoelectric material. Our results show that the n-type ZrNiPb-based materials can achieve high peak power factors, ~50 μW cm^–1 K^–2, by optimally tuning the carrier concentration via Bi doping. By further Sn-alloying in Pb site, we achieve a significant reduction of lattice thermal conductivity while maintaining the power factor almost unchanged and hence noticeably improve the ZT. Our work demonstrates that n-type ZrNiPb-based half-Heuslers are promising thermoelectric materials.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001299; FG02-09ER46577

OSTI ID:: 1388433

Journal Information:: Chemistry of Materials, Vol. 29, Issue 2; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; ISSN 0897-4756

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 51 works

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Title: Thermoelectric Properties of n-type ZrNiPb-Based Half-Heuslers

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