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Title: The effect of shallow vs. deep level doping on the performance of thermoelectric materials

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [3];  [1]
  1. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  2. Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA
  3. Department of Physics and TcSUH, University of Houston, Houston, Texas 77204, USA
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1388428
DOE Contract Number:  
SC0001299; FG02-09ER46577
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 26; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Song, Qichen, Zhou, Jiawei, Meroueh, Laureen, Broido, David, Ren, Zhifeng, and Chen, Gang. The effect of shallow vs. deep level doping on the performance of thermoelectric materials. United States: N. p., 2016. Web. doi:10.1063/1.4973292.
Song, Qichen, Zhou, Jiawei, Meroueh, Laureen, Broido, David, Ren, Zhifeng, & Chen, Gang. The effect of shallow vs. deep level doping on the performance of thermoelectric materials. United States. doi:10.1063/1.4973292.
Song, Qichen, Zhou, Jiawei, Meroueh, Laureen, Broido, David, Ren, Zhifeng, and Chen, Gang. Mon . "The effect of shallow vs. deep level doping on the performance of thermoelectric materials". United States. doi:10.1063/1.4973292.
@article{osti_1388428,
title = {The effect of shallow vs. deep level doping on the performance of thermoelectric materials},
author = {Song, Qichen and Zhou, Jiawei and Meroueh, Laureen and Broido, David and Ren, Zhifeng and Chen, Gang},
abstractNote = {},
doi = {10.1063/1.4973292},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 26,
volume = 109,
place = {United States},
year = {2016},
month = {12}
}

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