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Title: The effect of shallow vs. deep level doping on the performance of thermoelectric materials

ORCiD logo [1];  [1];  [1];  [2];  [3];  [1]
  1. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  2. Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA
  3. Department of Physics and TcSUH, University of Houston, Houston, Texas 77204, USA
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
DOE Contract Number:  
SC0001299; FG02-09ER46577
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 26; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Country of Publication:
United States
solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Song, Qichen, Zhou, Jiawei, Meroueh, Laureen, Broido, David, Ren, Zhifeng, and Chen, Gang. The effect of shallow vs. deep level doping on the performance of thermoelectric materials. United States: N. p., 2016. Web. doi:10.1063/1.4973292.
Song, Qichen, Zhou, Jiawei, Meroueh, Laureen, Broido, David, Ren, Zhifeng, & Chen, Gang. The effect of shallow vs. deep level doping on the performance of thermoelectric materials. United States. doi:10.1063/1.4973292.
Song, Qichen, Zhou, Jiawei, Meroueh, Laureen, Broido, David, Ren, Zhifeng, and Chen, Gang. Mon . "The effect of shallow vs. deep level doping on the performance of thermoelectric materials". United States. doi:10.1063/1.4973292.
title = {The effect of shallow vs. deep level doping on the performance of thermoelectric materials},
author = {Song, Qichen and Zhou, Jiawei and Meroueh, Laureen and Broido, David and Ren, Zhifeng and Chen, Gang},
abstractNote = {},
doi = {10.1063/1.4973292},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 26,
volume = 109,
place = {United States},
year = {2016},
month = {12}

Works referenced in this record:

Resonant Raman scattering in the II-IV semiconductors Mg 2 Si, Mg 2 Ge, and Mg 2 Sn
journal, October 1976

Effect of quantum-well structures on the thermoelectric figure of merit
journal, May 1993

Isotope scattering of dispersive phonons in Ge
journal, January 1983

Low effective mass leading to high thermoelectric performance
journal, January 2012

  • Pei, Yanzhong; LaLonde, Aaron D.; Wang, Heng
  • Energy & Environmental Science, Vol. 5, Issue 7
  • DOI: 10.1039/c2ee21536e

Tuning of thermoelectric properties with changing Se content in Sb 2 Te 3
journal, February 2016

Beneficial Contribution of Alloy Disorder to Electron and Phonon Transport in Half-Heusler Thermoelectric Materials
journal, April 2013

  • Xie, Hanhui; Wang, Heng; Pei, Yanzhong
  • Advanced Functional Materials, Vol. 23, Issue 41
  • DOI: 10.1002/adfm.201300663

Ab initio and molecular dynamics predictions for electron and phonon transport in bismuth telluride
journal, March 2008

Highly effective Mg 2 Si 1 x Sn x thermoelectrics
journal, July 2006

Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration
journal, January 2015

  • Zhang, Qian; Chere, Eyob Kebede; McEnaney, Kenneth
  • Advanced Energy Materials, Vol. 5, Issue 8
  • DOI: 10.1002/aenm.201401977

Stabilizing the Optimal Carrier Concentration for High Thermoelectric Efficiency
journal, November 2011

  • Pei, Yanzhong; LaLonde, Aaron D.; Heinz, Nicholas A.
  • Advanced Materials, Vol. 23, Issue 47
  • DOI: 10.1002/adma.201103153

Conductivity-limiting bipolar thermal conductivity in semiconductors
journal, May 2015

  • Wang, Shanyu; Yang, Jiong; Toll, Trevor
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep10136

Mechanical, electronic, and optical properties of Bi2S3 and Bi2Se3 compounds: first principle investigations
journal, March 2014

Transport properties of lightly doped CoSb 3 single crystals
journal, July 1997

Properties of single crystalline semiconducting CoSb 3
journal, October 1996

  • Caillat, T.; Borshchevsky, A.; Fleurial, J. ‐P.
  • Journal of Applied Physics, Vol. 80, Issue 8
  • DOI: 10.1063/1.363405

Deformation Potentials and Mobilities in Non-Polar Crystals
journal, October 1950

Electron scattering by ionized impurities in semiconductors
journal, October 1981

Investigation of the Valence Band Structure of Thermoelectric (Bi1−xSbx)2Te3 Single Crystals
journal, November 1988

  • Stordeur, M.; Stölzer, M.; Sobotta, H.
  • physica status solidi (b), Vol. 150, Issue 1
  • DOI: 10.1002/pssb.2221500120

Spectral mapping of thermal conductivity through nanoscale ballistic transport
journal, June 2015

  • Hu, Yongjie; Zeng, Lingping; Minnich, Austin J.
  • Nature Nanotechnology, Vol. 10, Issue 8
  • DOI: 10.1038/nnano.2015.109

Enhancing the thermoelectric figure of merit through the reduction of bipolar thermal conductivity with heterostructure barriers
journal, August 2014

  • Bahk, Je-Hyeong; Shakouri, Ali
  • Applied Physics Letters, Vol. 105, Issue 5
  • DOI: 10.1063/1.4892653

Phonon Scattering and Thermal Conductivity in p-Type Nanostructured PbTe-BaTe Bulk Thermoelectric Materials
journal, August 2012

  • Lo, Shih-Han; He, Jiaqing; Biswas, Kanishka
  • Advanced Functional Materials, Vol. 22, Issue 24
  • DOI: 10.1002/adfm.201201221

Relationship between thermoelectric figure of merit and energy conversion efficiency
journal, June 2015

  • Kim, Hee Seok; Liu, Weishu; Chen, Gang
  • Proceedings of the National Academy of Sciences, Vol. 112, Issue 27
  • DOI: 10.1073/pnas.1510231112

Deep Level Impurities in Semiconductors
journal, August 1977

Suppressing the bipolar contribution to the thermoelectric properties of Mg 2 Si 0.4 Sn 0.6 by Ge substitution
journal, April 2015

  • Zhang, Libin; Xiao, Penghao; Shi, Li
  • Journal of Applied Physics, Vol. 117, Issue 15
  • DOI: 10.1063/1.4918311

New insight into the material parameter B to understand the enhanced thermoelectric performance of Mg 2 Sn 1−x−y Ge x Sb y
journal, January 2016

  • Liu, Weishu; Zhou, Jiawei; Jie, Qing
  • Energy & Environmental Science, Vol. 9, Issue 2
  • DOI: 10.1039/C5EE02600H

The approximation of the Fermi-Dirac integral 12 (η)
journal, January 1978

Enhancement of Thermoelectric Properties by Modulation-Doping in Silicon Germanium Alloy Nanocomposites
journal, January 2012

  • Yu, Bo; Zebarjadi, Mona; Wang, Hui
  • Nano Letters, Vol. 12, Issue 4, p. 2077-2082
  • DOI: 10.1021/nl3003045

Chemical Synthesis of Anisotropic Nanocrystalline Sb<SUB>2</SUB>Te<SUB>3</SUB> and Low Thermal Conductivity of the Compacted Dense Bulk
journal, January 2008

  • Wang, Wenzhong; Yan, Xiao; Poudel, Bed
  • Journal of Nanoscience and Nanotechnology, Vol. 8, Issue 1
  • DOI: 10.1166/jnn.2008.062

Bulk nanostructured thermoelectric materials: current research and future prospects
journal, January 2009

  • Minnich, A. J.; Dresselhaus, M. S.; Ren, Z. F.
  • Energy & Environmental Science, Vol. 2, Issue 5
  • DOI: 10.1039/b822664b

Deep donor levels ( D X centers) in III‐V semiconductors
journal, February 1990

  • Mooney, P. M.
  • Journal of Applied Physics, Vol. 67, Issue 3
  • DOI: 10.1063/1.345628

A new model of deep donor centres in Al x Ga 1-x As
journal, January 1987

Deep defect states in narrow band-gap semiconductors
journal, December 2007

Impurity levels in PbTe and Pb1−xSnxTe
journal, January 1987

High Thermoelectric Efficiency of n-type PbS
journal, November 2012

  • Wang, Heng; Schechtel, Eugen; Pei, Yanzhong
  • Advanced Energy Materials, Vol. 3, Issue 4
  • DOI: 10.1002/aenm.201200683