Prediction of two-dimensional topological insulator by forming a surface alloy on Au/Si(111) substrate

Chuang, Feng-Chuan; Hsu, Chia-Hsiu; Chou, Hsin-Lei; Crisostomo, Christian P.; Huang, Zhi-Quan; Wu, Shih-Yu; Kuo, Chien-Cheng; Yeh, Wang-Chi V.; Lin, Hsin; Bansil, Arun

doi:10.1103/PhysRevB.93.035429

Title: Prediction of two-dimensional topological insulator by forming a surface alloy on Au/Si(111) substrate

Journal Article · Tue Jan 19 00:00:00 EST 2016 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.93.035429· OSTI ID:1387716

Chuang, Feng-Chuan ^[1]; Hsu, Chia-Hsiu ^[1]; Chou, Hsin-Lei ^[1]; Crisostomo, Christian P. ^[1]; Huang, Zhi-Quan ^[1]; Wu, Shih-Yu ^[1]; Kuo, Chien-Cheng ^[1]; Yeh, Wang-Chi V. ^[2]; Lin, Hsin ^[3]; Bansil, Arun ^[4]

National Sun Yat-Sen Univ., Kaohsiung (Taiwan)
National Dong Hwa Univ., Hualien (Taiwan)
National Univ. of Singapore (Singapore)
Northeastern Univ., Boston, MA (United States)

Two-dimensional (2D) topological insulators (TIs), which can be integrated into the modern silicon industry, are highly desirable for spintronics applications. Here, using first-principles electronic structure calculations, we show that the Au/Si(111)- $\sqrt{3}$ substrate can provide a platform for hosting 2D TIs obtained through the formation of surface alloys with a honeycomb pattern of adsorbed atoms. We systematically examined elements from groups III to VI of the periodic table at 2/3 monolayer coverage on Au/Si(111)- $\sqrt{3}$ , and found that In, Tl, Ge, and Sn adsorbates result in topologically nontrivial phases with band gaps varying from 0 to 50 meV. Our scanning tunneling microscopy and low-energy electron diffraction experiments confirm the presence of the honeycomb pattern when Bi atoms are deposited on Au/Si(111)- $\sqrt{3}$ , in accord with our theoretical predictions. Our findings pave the way for using surface alloys as a potential route for obtaining viable 2D TI platforms.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for the Computational Design of Functional Layered Materials (CCDM)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Ministry of Science and Technology of Taiwan (MOST); Singapore National Research Foundation (NRF)

Grant/Contract Number:: SC0012575; MOST-104-2112-M110- 002-MY3; MOST-101-2218-E-110-003-MY3; MOST-102-2112-M-110-006-MY2; MOST-104-2112-M-110-011; FG02-07ER46352; AC02-05CH11231; NRF-NRFF2013-03

OSTI ID:: 1387716

Alternate ID(s):: OSTI ID: 1235631

Journal Information:: Physical Review B, Vol. 93, Issue 3; Related Information: CCDM partners with Temple University (lead); Brookhaven National Laboratory; Drexel University; Duke University; North Carolina State University; Northeastern University; Princeton University; Rice University; University of Pennsylvania; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 28 works

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References (70)

Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
The formation and electronic properties of hydrogenated bilayer silicene from first-principles Rui, Wang; Shaofeng, Wang; Xiaozhi, Wu Journal of Applied Physics, Vol. 116, Issue 2 https://doi.org/10.1063/1.4887353	journal	July 2014
Band structure scenario for the giant spin-orbit splitting observed at the Bi/Si(111) interface Frantzeskakis, Emmanouil; Pons, Stéphane; Grioni, Marco Physical Review B, Vol. 82, Issue 8 https://doi.org/10.1103/PhysRevB.82.085440	journal	August 2010
The nontrivial electronic structure of Bi/Sb honeycombs on SiC(0001) Hsu, Chia-Hsiu; Huang, Zhi-Quan; Chuang, Feng-Chuan New Journal of Physics, Vol. 17, Issue 2 https://doi.org/10.1088/1367-2630/17/2/025005	journal	February 2015
Quasiparticle dynamics in reshaped helical Dirac cone of topological insulators Miao, L.; Wang, Z. F.; Ming, W. Proceedings of the National Academy of Sciences, Vol. 110, Issue 8 https://doi.org/10.1073/pnas.1218104110	journal	February 2013
Quantum Spin Hall Insulator State in HgTe Quantum Wells Konig, M.; Wiedmann, S.; Brune, C. Science, Vol. 318, Issue 5851, p. 766-770 https://doi.org/10.1126/science.1148047	journal	November 2007
Creation of helical Dirac fermions by interfacing two gapped systems of ordinary fermions Wang, Z. F.; Yao, Meng-Yu; Ming, Wenmei Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2387	journal	January 2013
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells Bernevig, B. A.; Hughes, T. L.; Zhang, S.-C. Science, Vol. 314, Issue 5806, p. 1757-1761 https://doi.org/10.1126/science.1133734	journal	December 2006
From ultrasoft pseudopotentials to the projector augmented-wave method Kresse, G.; Joubert, D. Physical Review B, Vol. 59, Issue 3, p. 1758-1775 https://doi.org/10.1103/PhysRevB.59.1758	journal	January 1999
Spatial and Energy Distribution of Topological Edge States in Single Bi(111) Bilayer Yang, Fang; Miao, Lin; Wang, Z. F. Physical Review Letters, Vol. 109, Issue 1 https://doi.org/10.1103/PhysRevLett.109.016801	journal	July 2012
First-principles study of atomic structures and electronic properties of ultrathin Bi films on Ge(111) Hsu, Chia-Hsiu; Chang, Hua-Rong; Chuang, Feng-Chuan Surface Science, Vol. 626 https://doi.org/10.1016/j.susc.2014.03.024	journal	August 2014
Two-dimensional electron gas formed on the indium-adsorbed $Si (111) \sqrt{3} \times \sqrt{3} -Au$ surface Kim, J. K.; Kim, K. S.; McChesney, J. L. Physical Review B, Vol. 80, Issue 7 https://doi.org/10.1103/PhysRevB.80.075312	journal	August 2009
Graphane: A two-dimensional hydrocarbon Sofo, Jorge O.; Chaudhari, Ajay S.; Barber, Greg D. Physical Review B, Vol. 75, Issue 15 https://doi.org/10.1103/PhysRevB.75.153401	journal	April 2007
Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field Chen, Li; Wang, Z. F.; Liu, Feng Physical Review B, Vol. 87, Issue 23 https://doi.org/10.1103/PhysRevB.87.235420	journal	June 2013
Ab initiomolecular dynamics for liquid metals Kresse, G.; Hafner, J. Physical Review B, Vol. 47, Issue 1, p. 558-561 https://doi.org/10.1103/PhysRevB.47.558	journal	January 1993
Giant Topological Nontrivial Band Gaps in Chloridized Gallium Bismuthide Li, Linyang; Zhang, Xiaoming; Chen, Xin Nano Letters, Vol. 15, Issue 2 https://doi.org/10.1021/nl504493d	journal	January 2015
Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling Zhou, Miao; Ming, Wenmei; Liu, Zheng Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep07102	journal	November 2014
Quantum Spin Hall Effect in Three Dimensional Materials: Lattice Computation of Z ₂ Topological Invariants and Its Application to Bi and Sb Fukui, Takahiro; Hatsugai, Yasuhiro Journal of the Physical Society of Japan, Vol. 76, Issue 5 https://doi.org/10.1143/JPSJ.76.053702	journal	May 2007
Evidence for Helical Edge Modes in Inverted $InAs / GaSb$ Quantum Wells Knez, Ivan; Du, Rui-Rui; Sullivan, Gerard Physical Review Letters, Vol. 107, Issue 13 https://doi.org/10.1103/PhysRevLett.107.136603	journal	September 2011
Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X=H, F, Cl and Br) monolayers with a record bulk band gap Song, Zhigang; Liu, Cheng-Cheng; Yang, Jinbo NPG Asia Materials, Vol. 6, Issue 12 https://doi.org/10.1038/am.2014.113	journal	December 2014
Quantum Spin Hall Effect in Silicene and Two-Dimensional Germanium Liu, Cheng-Cheng; Feng, Wanxiang; Yao, Yugui Physical Review Letters, Vol. 107, Issue 7 https://doi.org/10.1103/PhysRevLett.107.076802	journal	August 2011
Strain driven topological phase transitions in atomically thin films of group IV and V elements in the honeycomb structures Huang, Zhi-Quan; Hsu, Chia-Hsiu; Chuang, Feng-Chuan New Journal of Physics, Vol. 16, Issue 10 https://doi.org/10.1088/1367-2630/16/10/105018	journal	October 2014
Electronic structure of the indium-adsorbed Au/Si(111)- $\sqrt{3} \times \sqrt{3}$ surface: A first-principles study Hsu, Chia-Hsiu; Lin, Wen-Huan; Ozolins, Vidvuds Physical Review B, Vol. 85, Issue 15 https://doi.org/10.1103/PhysRevB.85.155401	journal	April 2012
Structural phase transitions of $Si (111) - (\sqrt{3} \times \sqrt{3}) R 30 ° - Au$ : Phase transitions in domain-wall configurations Nagao, T.; Hasegawa, S.; Tsuchie, K. Physical Review B, Vol. 57, Issue 16 https://doi.org/10.1103/PhysRevB.57.10100	journal	April 1998
Self-Consistent Equations Including Exchange and Correlation Effects Kohn, W.; Sham, L. J. Physical Review, Vol. 140, Issue 4A, p. A1133-A1138 https://doi.org/10.1103/PhysRev.140.A1133	journal	November 1965
Nontrivial topological electronic structures in a single Bi(111) bilayer on different substrates: A first-principles study Huang, Zhi-Quan; Chuang, Feng-Chuan; Hsu, Chia-Hsiu Physical Review B, Vol. 88, Issue 16 https://doi.org/10.1103/PhysRevB.88.165301	journal	October 2013
Structural and electronic properties of the Bi/Au(110)–1 $\times$ 4 surface Crepaldi, A.; Tournier-Colletta, C.; Pivetta, M. Physical Review B, Vol. 88, Issue 19 https://doi.org/10.1103/PhysRevB.88.195433	journal	November 2013
Tunable Spin Polarization in Bismuth Ultrathin Film on Si(111) Takayama, Akari; Sato, Takafumi; Souma, Seigo Nano Letters, Vol. 12, Issue 4 https://doi.org/10.1021/nl2035018	journal	January 2012
Influence of the exchange screening parameter on the performance of screened hybrid functionals Krukau, Aliaksandr V.; Vydrov, Oleg A.; Izmaylov, Artur F. The Journal of Chemical Physics, Vol. 125, Issue 22 https://doi.org/10.1063/1.2404663	journal	December 2006
$Z_{2}$ Topological Order and the Quantum Spin Hall Effect Kane, C. L.; Mele, E. J. Physical Review Letters, Vol. 95, Issue 14, Article No. 146802 https://doi.org/10.1103/PhysRevLett.95.146802	journal	September 2005
Special points for Brillouin-zone integrations Monkhorst, Hendrik J.; Pack, James D. Physical Review B, Vol. 13, Issue 12, p. 5188-5192 https://doi.org/10.1103/PhysRevB.13.5188	journal	June 1976
Gated silicene as a tunable source of nearly 100% spin-polarized electrons Tsai, Wei-Feng; Huang, Cheng-Yi; Chang, Tay-Rong Nature Communications, Vol. 4, Article No. 1500 https://doi.org/10.1038/ncomms2525	journal	February 2013
Prediction of Large-Gap Two-Dimensional Topological Insulators Consisting of Bilayers of Group III Elements with Bi Chuang, Feng-Chuan; Yao, Liang-Zi; Huang, Zhi-Quan Nano Letters, Vol. 14, Issue 5 https://doi.org/10.1021/nl500206u	journal	April 2014
Quantum Spin Hall Effect in Graphene Kane, C. L.; Mele, E. J. Physical Review Letters, Vol. 95, Issue 22 https://doi.org/10.1103/PhysRevLett.95.226801	journal	November 2005
$Si (111) − α − \sqrt{3} \times \sqrt{3} − Au$ phase modified by In adsorption: Stabilization of a homogeneous surface by stress relief Gruznev, D. V.; Filippov, I. N.; Olyanich, D. A. Physical Review B, Vol. 73, Issue 11 https://doi.org/10.1103/PhysRevB.73.115335	journal	March 2006
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Quantum Spin Hall Effect in Inverted Type-II Semiconductors Liu, Chaoxing; Hughes, Taylor L.; Qi, Xiao-Liang Physical Review Letters, Vol. 100, Issue 23 https://doi.org/10.1103/PhysRevLett.100.236601	journal	June 2008
Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface Zhou, Miao; Ming, Wenmei; Liu, Zheng Proceedings of the National Academy of Sciences, Vol. 111, Issue 40 https://doi.org/10.1073/pnas.1409701111	journal	September 2014
Group IV Graphene- and Graphane-Like Nanosheets Garcia, Joelson C.; de Lima, Denille B.; Assali, Lucy V. C. The Journal of Physical Chemistry C, Vol. 115, Issue 27 https://doi.org/10.1021/jp203657w	journal	June 2011
Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)- $\sqrt{3} \times \sqrt{3}$ substrate Huang, Zhi-Quan; Chou, Bo-Hung; Hsu, Chia-Hsiu Physical Review B, Vol. 90, Issue 24 https://doi.org/10.1103/PhysRevB.90.245433	journal	December 2014
Inhomogeneous Electron Gas Hohenberg, P.; Kohn, W. Physical Review, Vol. 136, Issue 3B, p. B864-B871 https://doi.org/10.1103/PhysRev.136.B864	journal	November 1964
Silicon Surface with Giant Spin Splitting Gierz, I.; Suzuki, T.; Frantzeskakis, E. Physical Review Letters, Vol. 103, Issue 4 https://doi.org/10.1103/PhysRevLett.103.046803	journal	July 2009
Large-Gap Quantum Spin Hall Insulators in Tin Films Xu, Yong; Yan, Binghai; Zhang, Hai-Jun Physical Review Letters, Vol. 111, Issue 13 https://doi.org/10.1103/PhysRevLett.111.136804	journal	September 2013
Localized edge states in two-dimensional topological insulators: Ultrathin Bi films Wada, M.; Murakami, S.; Freimuth, F. Physical Review B, Vol. 83, Issue 12 https://doi.org/10.1103/PhysRevB.83.121310	journal	March 2011
Low-energy effective Hamiltonian for giant-gap quantum spin Hall insulators in honeycomb $X$ -hydride/halide $(X = N - Bi)$ monolayers Liu, Cheng-Cheng; Guan, Shan; Song, Zhigang Physical Review B, Vol. 90, Issue 8 https://doi.org/10.1103/PhysRevB.90.085431	journal	August 2014
Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III–V Buckled Honeycombs Crisostomo, Christian P.; Yao, Liang-Zi; Huang, Zhi-Quan Nano Letters, Vol. 15, Issue 10 https://doi.org/10.1021/acs.nanolett.5b02293	journal	September 2015
Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate Yao, Liang-Zi; Crisostomo, Christian P.; Yeh, Chun-Chen Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep15463	journal	November 2015
Topologically Protected Quantum Transport in Locally Exfoliated Bismuth at Room Temperature Sabater, C.; Gosálbez-Martínez, D.; Fernández-Rossier, J. Physical Review Letters, Vol. 110, Issue 17 https://doi.org/10.1103/PhysRevLett.110.176802	journal	April 2013
Interplay between Forward and Backward Scattering of Spin–Orbit Split Surface States of Bi(111) Cottin, Maren C.; Bobisch, Christian A.; Schaffert, Johannes Nano Letters, Vol. 13, Issue 6 https://doi.org/10.1021/nl400878r	journal	May 2013
Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane Elias, D. C.; Nair, R. R.; Mohiuddin, T. M. G. Science, Vol. 323, Issue 5914 https://doi.org/10.1126/science.1167130	journal	January 2009
First-Principles Study of Ferromagnetism in Two-Dimensional Silicene with Hydrogenation Zhang, Chang-wen; Yan, Shi-shen The Journal of Physical Chemistry C, Vol. 116, Issue 6 https://doi.org/10.1021/jp2104177	journal	February 2012
Stable structure of high In coverage on $Si (111) − α − \sqrt{3} \times \sqrt{3}$ -Au Wu, Shih-Yu; Hsu, Chia-Hsiu; Yeh, Wang-chi V. Physical Review B, Vol. 90, Issue 23 https://doi.org/10.1103/PhysRevB.90.235407	journal	December 2014
Tunable topological electronic structures in Sb(111) bilayers: A first-principles study Chuang, Feng-Chuan; Hsu, Chia-Hsiu; Chen, Chia-Yu Applied Physics Letters, Vol. 102, Issue 2 https://doi.org/10.1063/1.4776734	journal	January 2013
Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators Chou, Bo-Hung; Huang, Zhi-Quan; Hsu, Chia-Hsiu New Journal of Physics, Vol. 16, Issue 11 https://doi.org/10.1088/1367-2630/16/11/115008	journal	November 2014
Interfacing 2D and 3D Topological Insulators: Bi(111) Bilayer on ${Bi}_{2} {Te}_{3}$ Hirahara, Toru; Bihlmayer, Gustav; Sakamoto, Yusuke Physical Review Letters, Vol. 107, Issue 16 https://doi.org/10.1103/PhysRevLett.107.166801	journal	October 2011
Topological Properties Determined by Atomic Buckling in Self-Assembled Ultrathin Bi(110) Lu, Yunhao; Xu, Wentao; Zeng, Mingang Nano Letters, Vol. 15, Issue 1 https://doi.org/10.1021/nl502997v	journal	December 2014
Structural transformations in (Au,In)/Si(111) system and their effect on surface conductivity Gruznev, D. V.; Matetskiy, A. V.; Bondarenko, L. V. Surface Science, Vol. 605, Issue 15-16 https://doi.org/10.1016/j.susc.2011.05.004	journal	August 2011
Nonlocal Transport in the Quantum Spin Hall State Roth, A.; Brune, C.; Buhmann, H. Science, Vol. 325, Issue 5938 https://doi.org/10.1126/science.1174736	journal	July 2009
Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets Chen, Ruyi; Cui, Qirui; Liao, Liyang Nature Communications, Vol. 12, Issue 1 https://doi.org/10.1038/s41467-021-23414-3	journal	May 2021
Control of graphene's properties by reversible hydrogenation: evidence for graphane Elias, Dc; Nair, Rr; Mohiuddin, Tmg Apollo - University of Cambridge Repository https://doi.org/10.17863/cam.30169	text	January 2009
An ultrasensitive molybdenum-based double-heterojunction phototransistor Zenodo https://doi.org/10.5281/zenodo.4835973	text	January 2021
Quantum Spin Hall Effect in Inverted Type II Semiconductors Liu, Chaoxing; Hughes, Taylor L.; Qi, Xiao-Liang arXiv https://doi.org/10.48550/arxiv.0801.2831	text	January 2008
Well-localized edge states in two-dimensional topological insulators: ultrathin Bi films Wada, M.; Murakami, S.; Freimuth, F. arXiv https://doi.org/10.48550/arxiv.1005.3912	text	January 2010
A band structure scenario for the giant spin-orbit splitting observed at the Bi/Si(111) interface Frantzeskakis, Emmanouil; Pons, Stephane; Grioni, Marco arXiv https://doi.org/10.48550/arxiv.1006.3566	text	January 2010
Group-IV graphene- and graphane-like nanosheets Garcia, Joelson Cott; de Lima, Denille B.; Assali, Lucy V. C. arXiv https://doi.org/10.48550/arxiv.1204.2875	text	January 2012
Topologically protected quantum transport in locally exfoliated bismuth at room temperature Sabater, C.; Gosálbez-Martínez, D.; Fernández-Rossier, J. arXiv https://doi.org/10.48550/arxiv.1304.0934	text	January 2013
Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling Zhou, Miao; Ming, Wenmei; Liu, Zheng arXiv https://doi.org/10.48550/arxiv.1401.3392	text	January 2014
Low-Energy Effective Hamiltonian for Giant-Gap Quantum Spin Hall Insulators in Honeycomb X-Hydride/Halide (X=N-Bi) Monolayers Liu, Cheng-Cheng; Guan, Shan; Song, Zhigang arXiv https://doi.org/10.48550/arxiv.1402.5817	text	January 2014
Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface Zhou, Miao; Ming, Wenmei; Liu, Zheng arXiv https://doi.org/10.48550/arxiv.1411.5314	text	January 2014
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells Bernevig, B. Andrei; Hughes, Taylor L.; Zhang, Shou-Cheng arXiv https://doi.org/10.48550/arxiv.cond-mat/0611399	text	January 2006

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Title: Prediction of two-dimensional topological insulator by forming a surface alloy on Au/Si(111) substrate

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