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Title: Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration

Abstract

Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n-type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm2 V-1s-1 at lower carrier concentration. A larger average ZT value (relevant for applications) can be obtained by an optimization of carrier concentration to ≈1018–1019 cm-3. Even though the highest room temperature power factor ≈3.3 × 10-3 W m-1 K-2 is found in 1 at% Mo-doped PbSe, the highest ZT is achieved in Cr-doped PbSe. Combined with the lower thermal conductivity, ZT is improved to ≈0.4 at room temperature and peak ZTs of ≈1.0 are observed at ≈573 K for Pb0.9925Cr0.0075Se and ≈673 K for Pb0.995Cr0.005Se. The calculated device efficiency of Pb0.995Cr0.005Se is as high as ≈12.5% with cold side 300 K and hot side 873 K, higher than those of all the n-type PbSe materials reported in the literature.

Authors:
 [1];  [1];  [2];  [3];  [1];  [1];  [1];  [3];  [2];  [1]
  1. Department of Physics and TcSUH, University of Houston, Houston TX 77204 USA
  2. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 USA
  3. Department of Physics, Boston College, Chestnut Hill MA 02467 USA
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1387103
DOE Contract Number:  
SC0001299; FG02-09ER46577
Resource Type:
Journal Article
Resource Relation:
Journal Name: Advanced Energy Materials; Journal Volume: 5; Journal Issue: 8; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Zhang, Qian, Chere, Eyob Kebede, McEnaney, Kenneth, Yao, Mengliang, Cao, Feng, Ni, Yizhou, Chen, Shuo, Opeil, Cyril, Chen, Gang, and Ren, Zhifeng. Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration. United States: N. p., 2015. Web. doi:10.1002/aenm.201401977.
Zhang, Qian, Chere, Eyob Kebede, McEnaney, Kenneth, Yao, Mengliang, Cao, Feng, Ni, Yizhou, Chen, Shuo, Opeil, Cyril, Chen, Gang, & Ren, Zhifeng. Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration. United States. doi:10.1002/aenm.201401977.
Zhang, Qian, Chere, Eyob Kebede, McEnaney, Kenneth, Yao, Mengliang, Cao, Feng, Ni, Yizhou, Chen, Shuo, Opeil, Cyril, Chen, Gang, and Ren, Zhifeng. Wed . "Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration". United States. doi:10.1002/aenm.201401977.
@article{osti_1387103,
title = {Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration},
author = {Zhang, Qian and Chere, Eyob Kebede and McEnaney, Kenneth and Yao, Mengliang and Cao, Feng and Ni, Yizhou and Chen, Shuo and Opeil, Cyril and Chen, Gang and Ren, Zhifeng},
abstractNote = {Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n-type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm2 V-1s-1 at lower carrier concentration. A larger average ZT value (relevant for applications) can be obtained by an optimization of carrier concentration to ≈1018–1019 cm-3. Even though the highest room temperature power factor ≈3.3 × 10-3 W m-1 K-2 is found in 1 at% Mo-doped PbSe, the highest ZT is achieved in Cr-doped PbSe. Combined with the lower thermal conductivity, ZT is improved to ≈0.4 at room temperature and peak ZTs of ≈1.0 are observed at ≈573 K for Pb0.9925Cr0.0075Se and ≈673 K for Pb0.995Cr0.005Se. The calculated device efficiency of Pb0.995Cr0.005Se is as high as ≈12.5% with cold side 300 K and hot side 873 K, higher than those of all the n-type PbSe materials reported in the literature.},
doi = {10.1002/aenm.201401977},
journal = {Advanced Energy Materials},
number = 8,
volume = 5,
place = {United States},
year = {Wed Jan 07 00:00:00 EST 2015},
month = {Wed Jan 07 00:00:00 EST 2015}
}