skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Irradiation damage in Gd 2 Ti 2 O 7 single crystals: Ballistic versus ionization processes

Abstract

The structural transformations induced in Gd 2 Ti 2 O 7 single crystals irradiated at high energies (870-MeV Xe), where ionization processes (electronic stopping) dominate, and at low energies (4-MeV Au), where ballistic processes (nuclear stopping) dominate, have been studied via the combination of Rutherford backscattering spectrometry and channeling (RBS/C), Raman spectroscopy, and transmission electron microscopy (TEM) experiments. At high energy, amorphization occurs directly in individual ion tracks from the extreme electronic-energy deposition, and full amorphization results from the overlapping of these tracks as described by a direct impact model. The track diameters lie in the range 6–9 nm. At low energy, amorphization occurs via indirect processes, driven by ballistic nuclear energy deposition from the ions, that is accounted for in the framework of both direct-impact/defect-stimulated and multi-step damage accumulation models. The ion fluence for total amorphization of the irradiated layer is much higher at low energy (0.5 ion nm - 2 ) than at high energy (0.05 ion nm - 2 ), consistent with the nuclear stopping at low energy (5.2 keV/nm) compared to the electronic stopping at high energy (29 keV/nm).

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Materials Science of Actinides (MSA)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1386716
DOE Contract Number:  
SC0001089
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 84; Journal Issue: 6; Related Information: MSA partners with University of Notre Dame (lead); University of California, Davis; Florida State University; George Washington University; University of Michigan; University of Minnesota; Oak Ridge National Laboratory; Oregon state University; Rensselaer Polytechnic Institute; Savannah River National Laboratory; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; nuclear (including radiation effects), materials and chemistry by design, synthesis (novel materials), synthesis (self-assembly)

Citation Formats

Moll, S., Sattonnay, G., Thomé, L., Jagielski, J., Decorse, C., Simon, P., Monnet, I., and Weber, W. J. Irradiation damage in Gd 2 Ti 2 O 7 single crystals: Ballistic versus ionization processes. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.84.064115.
Moll, S., Sattonnay, G., Thomé, L., Jagielski, J., Decorse, C., Simon, P., Monnet, I., & Weber, W. J. Irradiation damage in Gd 2 Ti 2 O 7 single crystals: Ballistic versus ionization processes. United States. doi:10.1103/PhysRevB.84.064115.
Moll, S., Sattonnay, G., Thomé, L., Jagielski, J., Decorse, C., Simon, P., Monnet, I., and Weber, W. J. Mon . "Irradiation damage in Gd 2 Ti 2 O 7 single crystals: Ballistic versus ionization processes". United States. doi:10.1103/PhysRevB.84.064115.
@article{osti_1386716,
title = {Irradiation damage in Gd 2 Ti 2 O 7 single crystals: Ballistic versus ionization processes},
author = {Moll, S. and Sattonnay, G. and Thomé, L. and Jagielski, J. and Decorse, C. and Simon, P. and Monnet, I. and Weber, W. J.},
abstractNote = {The structural transformations induced in Gd 2 Ti 2 O 7 single crystals irradiated at high energies (870-MeV Xe), where ionization processes (electronic stopping) dominate, and at low energies (4-MeV Au), where ballistic processes (nuclear stopping) dominate, have been studied via the combination of Rutherford backscattering spectrometry and channeling (RBS/C), Raman spectroscopy, and transmission electron microscopy (TEM) experiments. At high energy, amorphization occurs directly in individual ion tracks from the extreme electronic-energy deposition, and full amorphization results from the overlapping of these tracks as described by a direct impact model. The track diameters lie in the range 6–9 nm. At low energy, amorphization occurs via indirect processes, driven by ballistic nuclear energy deposition from the ions, that is accounted for in the framework of both direct-impact/defect-stimulated and multi-step damage accumulation models. The ion fluence for total amorphization of the irradiated layer is much higher at low energy (0.5 ion nm - 2 ) than at high energy (0.05 ion nm - 2 ), consistent with the nuclear stopping at low energy (5.2 keV/nm) compared to the electronic stopping at high energy (29 keV/nm).},
doi = {10.1103/PhysRevB.84.064115},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 6,
volume = 84,
place = {United States},
year = {2011},
month = {8}
}