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Title: Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1386381
DOE Contract Number:  
SC0001009
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 102; Journal Issue: 25; Related Information: CEEM partners with the University of California, Santa Barbara (lead); Purdue University; Los Alamos National Laboratory; National Renewable Energy Laboratory; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Shivaraman, Ravi, Kawaguchi, Y., Tanaka, S., DenBaars, S. P., Nakamura, S., and Speck, J. S. Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography. United States: N. p., 2013. Web. doi:10.1063/1.4812363.
Shivaraman, Ravi, Kawaguchi, Y., Tanaka, S., DenBaars, S. P., Nakamura, S., & Speck, J. S. Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography. United States. doi:10.1063/1.4812363.
Shivaraman, Ravi, Kawaguchi, Y., Tanaka, S., DenBaars, S. P., Nakamura, S., and Speck, J. S. Mon . "Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography". United States. doi:10.1063/1.4812363.
@article{osti_1386381,
title = {Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography},
author = {Shivaraman, Ravi and Kawaguchi, Y. and Tanaka, S. and DenBaars, S. P. and Nakamura, S. and Speck, J. S.},
abstractNote = {},
doi = {10.1063/1.4812363},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 25,
volume = 102,
place = {United States},
year = {2013},
month = {6}
}

Works referenced in this record:

Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
journal, April 2013

  • Feezell, Daniel F.; Speck, James S.; DenBaars, Steven P.
  • Journal of Display Technology, Vol. 9, Issue 4
  • DOI: 10.1109/JDT.2012.2227682

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$
journal, July 2011

  • Zhao, Yuji; Tanaka, Shinichi; Pan, Chih-Chien
  • Applied Physics Express, Vol. 4, Issue 8
  • DOI: 10.1143/APEX.4.082104

Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
journal, May 2011

  • Prosa, T. J.; Clifton, P. H.; Zhong, H.
  • Applied Physics Letters, Vol. 98, Issue 19
  • DOI: 10.1063/1.3589370

In situ site-specific specimen preparation for atom probe tomography
journal, February 2007


Strain-induced polarization in wurtzite III-nitride semipolar layers
journal, July 2006

  • Romanov, A. E.; Baker, T. J.; Nakamura, S.
  • Journal of Applied Physics, Vol. 100, Issue 2
  • DOI: 10.1063/1.2218385

A general protocol for the reconstruction of 3D atom probe data
journal, March 1995


Nonpolar and Semipolar Group III Nitride-Based Materials
journal, May 2009


Advances in Pulsed-Laser Atom Probe: Instrument and Specimen Design for Optimum Performance
journal, November 2007

  • Bunton, Joseph H.; Olson, Jesse D.; Lenz, Daniel R.
  • Microscopy and Microanalysis, Vol. 13, Issue 6
  • DOI: 10.1017/S1431927607070869

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
journal, August 2012

  • Wu, Yuh-Renn; Shivaraman, Ravi; Wang, Kuang-Chung
  • Applied Physics Letters, Vol. 101, Issue 8
  • DOI: 10.1063/1.4747532

A System for Simulation of Tip Evolution Under Field Evaporation
journal, July 2009


Review of Atom Probe FIB-Based Specimen Preparation Methods
journal, November 2007

  • Miller, Michael K.; Russell, Kaye F.; Thompson, Keith
  • Microscopy and Microanalysis, Vol. 13, Issue 6
  • DOI: 10.1017/S1431927607070845

Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
journal, January 2010

  • Masui, Hisashi; Nakamura, Shuji; DenBaars, Steven P.
  • IEEE Transactions on Electron Devices, Vol. 57, Issue 1
  • DOI: 10.1109/TED.2009.2033773

Quantitative binomial distribution analyses of nanoscale like‐solute atom clustering and segregation in atom probe tomography data
journal, July 2008

  • Moody, Michael P.; Stephenson, Leigh T.; Ceguerra, Anna V.
  • Microscopy Research and Technique, Vol. 71, Issue 7
  • DOI: 10.1002/jemt.20582

Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
journal, June 2012

  • Kawaguchi, Yoshinobu; Huang, Chia-Yen; Wu, Yuh-Renn
  • Applied Physics Letters, Vol. 100, Issue 23
  • DOI: 10.1063/1.4726106

High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
journal, November 2010

  • Yamamoto, Shuichiro; Zhao, Yuji; Pan, Chih-Chien
  • Applied Physics Express, Vol. 3, Issue 12
  • DOI: 10.1143/APEX.3.122102