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Title: Semiconducting properties of spinel tin nitride and other IV 3 N 4 polymorphs

Abstract

The semiconducting properties of tin nitride (spinel Sn 3N 4) is investigated and discussed in relation to group IV nitride polymorphs.

Authors:
 [1];  [2];  [1];  [3];  [3];  [2];  [2];  [1];  [2];  [2]
  1. National Renewable Energy Laboratory; Golden; USA; Colorado School of Mines; Department of Chemistry & Geochemistry
  2. National Renewable Energy Laboratory; Golden; USA
  3. Delft University of Technology; Department of Chemical Engineering; Materials for Energy Conversion and Storage; 2628 BL Delft; The Netherlands
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1386010
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Journal Article
Journal Name:
Journal of Materials Chemistry C
Additional Journal Information:
Journal Volume: 3; Journal Issue: 6; Related Information: CNGMD partners with National Renewable Energy Laboratory (lead); Colorado School of Mines; Harvard University; Lawrence Berkeley National Laboratory; Massachusetts Institute of Technology; Oregon State University; SLAC National Accelerator Laboratory; Journal ID: ISSN 2050-7526
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solar (fuels), solid state lighting, phonons, thermoelectric, hydrogen and fuel cells, defects, charge transport, optics, materials and chemistry by design, synthesis (novel materials)

Citation Formats

Caskey, Christopher M., Seabold, Jason A., Stevanović, Vladan, Ma, Ming, Smith, Wilson A., Ginley, David S., Neale, Nathan R., Richards, Ryan M., Lany, Stephan, and Zakutayev, Andriy. Semiconducting properties of spinel tin nitride and other IV 3 N 4 polymorphs. United States: N. p., 2015. Web. doi:10.1039/c4tc02528h.
Caskey, Christopher M., Seabold, Jason A., Stevanović, Vladan, Ma, Ming, Smith, Wilson A., Ginley, David S., Neale, Nathan R., Richards, Ryan M., Lany, Stephan, & Zakutayev, Andriy. Semiconducting properties of spinel tin nitride and other IV 3 N 4 polymorphs. United States. doi:10.1039/c4tc02528h.
Caskey, Christopher M., Seabold, Jason A., Stevanović, Vladan, Ma, Ming, Smith, Wilson A., Ginley, David S., Neale, Nathan R., Richards, Ryan M., Lany, Stephan, and Zakutayev, Andriy. Thu . "Semiconducting properties of spinel tin nitride and other IV 3 N 4 polymorphs". United States. doi:10.1039/c4tc02528h.
@article{osti_1386010,
title = {Semiconducting properties of spinel tin nitride and other IV 3 N 4 polymorphs},
author = {Caskey, Christopher M. and Seabold, Jason A. and Stevanović, Vladan and Ma, Ming and Smith, Wilson A. and Ginley, David S. and Neale, Nathan R. and Richards, Ryan M. and Lany, Stephan and Zakutayev, Andriy},
abstractNote = {The semiconducting properties of tin nitride (spinel Sn3N4) is investigated and discussed in relation to group IV nitride polymorphs.},
doi = {10.1039/c4tc02528h},
journal = {Journal of Materials Chemistry C},
issn = {2050-7526},
number = 6,
volume = 3,
place = {United States},
year = {2015},
month = {1}
}

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