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Title: Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO 2

Abstract

Here, we analyze the chemical vapor deposition of semiconductor crystals by selective area growth in a non-planar geometry. Specifically, the growth process in laterally and vertically confined masks forming single-crystal GaN on SiO2 by metal-organic chemical vapor deposition is considered in detail. A textured AlN seed is used to initiate growth of oriented GaN selectively through the mask, allowing the reduction of degrees of freedom by the evolutionary grain selection process. As shown by measurements of growth rates within the mask, the sub micron length scale of the channel opening is comparable to the mean free path of precursors in the gas phase, resulting in transport characteristics that can be described by an intermediate flow regime between continuum and free-molecular. Mass transport is modeled through kinetic theory to explain the growth rate enhancements of more than a factor of two by changes in reactor pressure. The growth conditions that enable the modification of nucleation density within the channel are then discussed, and are measured by electron-back scatter diffraction of the nucleated grains on the AlN seed. Finally, the selectivity behavior using the low fill factor masks needed in these configurations has been optimized by control of precursor flow rates andmore » the H2 enhanced etching of the polycrystalline GaN nuclei.« less

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1385895
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 426; Journal Issue: C; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; solar (photovoltaic), solid state lighting, phonons, materials and chemistry by design, optics, synthesis (novel materials)

Citation Formats

Leung, Benjamin, Tsai, Miao-Chan, Song, Jie, Zhang, Yu, Xiong, Kanglin, Yuan, Ge, Coltrin, Michael E., and Han, Jung. Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO 2. United States: N. p., 2015. Web. doi:10.1016/j.jcrysgro.2015.03.049.
Leung, Benjamin, Tsai, Miao-Chan, Song, Jie, Zhang, Yu, Xiong, Kanglin, Yuan, Ge, Coltrin, Michael E., & Han, Jung. Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO 2. United States. doi:10.1016/j.jcrysgro.2015.03.049.
Leung, Benjamin, Tsai, Miao-Chan, Song, Jie, Zhang, Yu, Xiong, Kanglin, Yuan, Ge, Coltrin, Michael E., and Han, Jung. Tue . "Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO 2". United States. doi:10.1016/j.jcrysgro.2015.03.049.
@article{osti_1385895,
title = {Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO 2},
author = {Leung, Benjamin and Tsai, Miao-Chan and Song, Jie and Zhang, Yu and Xiong, Kanglin and Yuan, Ge and Coltrin, Michael E. and Han, Jung},
abstractNote = {Here, we analyze the chemical vapor deposition of semiconductor crystals by selective area growth in a non-planar geometry. Specifically, the growth process in laterally and vertically confined masks forming single-crystal GaN on SiO2 by metal-organic chemical vapor deposition is considered in detail. A textured AlN seed is used to initiate growth of oriented GaN selectively through the mask, allowing the reduction of degrees of freedom by the evolutionary grain selection process. As shown by measurements of growth rates within the mask, the sub micron length scale of the channel opening is comparable to the mean free path of precursors in the gas phase, resulting in transport characteristics that can be described by an intermediate flow regime between continuum and free-molecular. Mass transport is modeled through kinetic theory to explain the growth rate enhancements of more than a factor of two by changes in reactor pressure. The growth conditions that enable the modification of nucleation density within the channel are then discussed, and are measured by electron-back scatter diffraction of the nucleated grains on the AlN seed. Finally, the selectivity behavior using the low fill factor masks needed in these configurations has been optimized by control of precursor flow rates and the H2 enhanced etching of the polycrystalline GaN nuclei.},
doi = {10.1016/j.jcrysgro.2015.03.049},
journal = {Journal of Crystal Growth},
issn = {0022-0248},
number = C,
volume = 426,
place = {United States},
year = {2015},
month = {9}
}