skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Energy Frontier Research in Extreme Environments (EFree)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1385721
DOE Contract Number:  
SC0001057
Resource Type:
Journal Article
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 5; Related Information: EFree partners with Carnegie Institution of Washington (lead); California Institute of Technology; Colorado School of Mines; Cornell University; Lehigh University; Pennsylvania State University; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
catalysis (heterogeneous), solar (photovoltaic), phonons, thermoelectric, energy storage (including batteries and capacitors), hydrogen and fuel cells, superconductivity, charge transport, mesostructured materials, materials and chemistry by design, synthesis (novel materials)

Citation Formats

Nayak, Avinash P., Bhattacharyya, Swastibrata, Zhu, Jie, Liu, Jin, Wu, Xiang, Pandey, Tribhuwan, Jin, Changqing, Singh, Abhishek K., Akinwande, Deji, and Lin, Jung-Fu. Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide. United States: N. p., 2014. Web. doi:10.1038/ncomms4731.
Nayak, Avinash P., Bhattacharyya, Swastibrata, Zhu, Jie, Liu, Jin, Wu, Xiang, Pandey, Tribhuwan, Jin, Changqing, Singh, Abhishek K., Akinwande, Deji, & Lin, Jung-Fu. Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide. United States. doi:10.1038/ncomms4731.
Nayak, Avinash P., Bhattacharyya, Swastibrata, Zhu, Jie, Liu, Jin, Wu, Xiang, Pandey, Tribhuwan, Jin, Changqing, Singh, Abhishek K., Akinwande, Deji, and Lin, Jung-Fu. Wed . "Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide". United States. doi:10.1038/ncomms4731.
@article{osti_1385721,
title = {Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide},
author = {Nayak, Avinash P. and Bhattacharyya, Swastibrata and Zhu, Jie and Liu, Jin and Wu, Xiang and Pandey, Tribhuwan and Jin, Changqing and Singh, Abhishek K. and Akinwande, Deji and Lin, Jung-Fu},
abstractNote = {},
doi = {10.1038/ncomms4731},
journal = {Nature Communications},
issn = {2041-1723},
number = ,
volume = 5,
place = {United States},
year = {2014},
month = {5}
}

Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Structure change, layer sliding, and metallization in high-pressure MoS 2
journal, April 2013


Projector augmented-wave method
journal, December 1994


Hybrid functionals based on a screened Coulomb potential
journal, May 2003

  • Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
  • The Journal of Chemical Physics, Vol. 118, Issue 18
  • DOI: 10.1063/1.1564060

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
journal, March 2013

  • Butler, Sheneve Z.; Hollen, Shawna M.; Cao, Linyou
  • ACS Nano, Vol. 7, Issue 4, p. 2898-2926
  • DOI: 10.1021/nn400280c

Mechanical and Electronic Properties of MoS 2 Nanoribbons and Their Defects
journal, February 2011

  • Ataca, C.; Şahin, H.; Aktürk, E.
  • The Journal of Physical Chemistry C, Vol. 115, Issue 10
  • DOI: 10.1021/jp1115146

Emerging Photoluminescence in Monolayer MoS2
journal, April 2010

  • Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
  • Nano Letters, Vol. 10, Issue 4, p. 1271-1275
  • DOI: 10.1021/nl903868w

Static compression of ?-Fe2O3: linear incompressibility of lattice parameters and high-pressure transformations
journal, October 2003

  • Liu, H.; Caldwell, W. A.; Benedetti, L. R.
  • Physics and Chemistry of Minerals, Vol. 30, Issue 9
  • DOI: 10.1007/s00269-003-0351-1

Electromechanics in MoS2 and WS2: nanotubes vs. monolayers
journal, October 2013

  • Ghorbani-Asl, Mahdi; Zibouche, Nourdine; Wahiduzzaman, Mohammad
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02961

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Temperature dependence of the electrical conductivity and hall coefficient in 2H-MoS2, MoSe2, WSe2, and MoTe2
journal, February 1977


Polarized light boosts valleytronics
journal, July 2012


Electronic and elastic properties of MoS2
journal, May 2010


Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
journal, April 2013

  • Fontana, Marcio; Deppe, Tristan; Boyd, Anthony K.
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep01634

Electronic Properties of V O 2 near the Semiconductor-Metal Transition
journal, September 1969


High pressure effect on MoS2 and MoSe2 single crystals grown by CVT method
journal, April 2004

  • Dave, Madhavi; Vaidya, Rajiv; Patel, S. G.
  • Bulletin of Materials Science, Vol. 27, Issue 2
  • DOI: 10.1007/BF02708507

Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013

  • Radisavljevic, Branimir; Kis, Andras
  • Nature Materials, Vol. 12, Issue 9
  • DOI: 10.1038/nmat3687

High-Detectivity Multilayer MoS 2 Phototransistors with Spectral Response from Ultraviolet to Infrared
journal, August 2012

  • Choi, Woong; Cho, Mi Yeon; Konar, Aniruddha
  • Advanced Materials, Vol. 24, Issue 43
  • DOI: 10.1002/adma.201201909

Single-Layer MoS2 Phototransistors
journal, December 2011

  • Yin, Zongyou; Li, Hai; Li, Hong
  • ACS Nano, Vol. 6, Issue 1, p. 74-80
  • DOI: 10.1021/nn2024557

Giant Phonon Softening and Enhancement of Superconductivity by Phosphorus Doping of BaNi 2 As 2
journal, August 2012


BoltzTraP. A code for calculating band-structure dependent quantities
journal, July 2006


Observation of Anomalous Phonon Softening in Bilayer Graphene
journal, September 2008


Bandgap Engineering of Strained Monolayer and Bilayer MoS2
journal, July 2013

  • Conley, Hiram J.; Wang, Bin; Ziegler, Jed I.
  • Nano Letters, Vol. 13, Issue 8, p. 3626-3630
  • DOI: 10.1021/nl4014748

Photoluminescence from Chemically Exfoliated MoS2
journal, December 2011

  • Eda, Goki; Yamaguchi, Hisato; Voiry, Damien
  • Nano Letters, Vol. 11, Issue 12, p. 5111-5116
  • DOI: 10.1021/nl201874w

Doping mechanisms in graphene-MoS 2 hybrids
journal, December 2013

  • Sachs, B.; Britnell, L.; Wehling, T. O.
  • Applied Physics Letters, Vol. 103, Issue 25
  • DOI: 10.1063/1.4852615

MoS 2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
journal, June 2012

  • Lee, Hee Sung; Min, Sung-Wook; Chang, Youn-Gyung
  • Nano Letters, Vol. 12, Issue 7
  • DOI: 10.1021/nl301485q

Phonons in single-layer and few-layer MoS 2 and WS 2
journal, October 2011


Symmetrized Fourier method for interpolating band-structure results
journal, March 1979


Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2
journal, October 2012

  • Tongay, Sefaattin; Zhou, Jian; Ataca, Can
  • Nano Letters, Vol. 12, Issue 11, p. 5576-5580
  • DOI: 10.1021/nl302584w

Anomalous Lattice Vibrations of Single- and Few-Layer MoS 2
journal, March 2010

  • Lee, Changgu; Yan, Hugen; Brus, Louis E.
  • ACS Nano, Vol. 4, Issue 5
  • DOI: 10.1021/nn1003937

Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides
journal, August 2012


Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

  • Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
  • Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
  • DOI: 10.1038/nnano.2012.193

Diamond anvil cell and high-pressure physical investigations
journal, January 1983


Pressure Induced Semiconductor-Semimetal Transition in WSe 2
journal, July 2010

  • Liu, Bao; Han, Yonghao; Gao, Chunxiao
  • The Journal of Physical Chemistry C, Vol. 114, Issue 33
  • DOI: 10.1021/jp104143e

Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides
journal, February 1982

  • Kam, K. K.; Parkinson, B. A.
  • The Journal of Physical Chemistry, Vol. 86, Issue 4
  • DOI: 10.1021/j100393a010

Phonon softening and the metal-insulator transition in VO 2
journal, June 1972


Phonon softening and crystallographic orientation of strained graphene studied by Raman spectroscopy
journal, April 2009

  • Huang, M.; Yan, H.; Chen, C.
  • Proceedings of the National Academy of Sciences, Vol. 106, Issue 18, p. 7304-7308
  • DOI: 10.1073/pnas.0811754106

Mechanical and electronic properties of monolayer MoS2 under elastic strain
journal, February 2012


Static compression of Ca(OH) 2 at room temperature: Observations of amorphization and equation of state measurements to 10.7 GPa
journal, July 1990


High-pressure Raman spectroscopy of graphene
journal, August 2009

  • Proctor, John E.; Gregoryanz, Eugene; Novoselov, Konstantin S.
  • Physical Review B, Vol. 80, Issue 7
  • DOI: 10.1103/PhysRevB.80.073408

Pressure-Mediated Doping in Graphene
journal, September 2011

  • Nicolle, Jimmy; Machon, Denis; Poncharal, Philippe
  • Nano Letters, Vol. 11, Issue 9
  • DOI: 10.1021/nl201243c

Semiempirical GGA-type density functional constructed with a long-range dispersion correction
journal, January 2006

  • Grimme, Stefan
  • Journal of Computational Chemistry, Vol. 27, Issue 15, p. 1787-1799
  • DOI: 10.1002/jcc.20495

Functionalization of Single-Layer MoS 2 Honeycomb Structures
journal, June 2011

  • Ataca, C.; Ciraci, S.
  • The Journal of Physical Chemistry C, Vol. 115, Issue 27
  • DOI: 10.1021/jp2000442

Semiconductor-To-Metal Transition in V 2 O 3
journal, March 1967


Resonant Raman scattering at exciton states tuned by pressure and temperature in 2 H -MoS 2
journal, May 2010


X-ray diffraction study of molybdenum disulfide to 38.8GPa
journal, September 2006

  • Aksoy, Resul; Ma, Yanzhang; Selvi, Emre
  • Journal of Physics and Chemistry of Solids, Vol. 67, Issue 9-10
  • DOI: 10.1016/j.jpcs.2006.05.058

First-principles calculations of the ferroelastic transition between rutile-type and CaCl 2 -type SiO 2 at high pressures
journal, October 2008


Valley polarization in MoS2 monolayers by optical pumping
journal, June 2012

  • Zeng, Hualing; Dai, Junfeng; Yao, Wang
  • Nature Nanotechnology, Vol. 7, Issue 8
  • DOI: 10.1038/nnano.2012.95

Two-dimensional detector software: From real detector to idealised image or two-theta scan
journal, January 1996

  • Hammersley, A. P.; Svensson, S. O.; Hanfland, M.
  • High Pressure Research, Vol. 14, Issue 4-6, p. 235-248
  • DOI: 10.1080/08957959608201408

Sharp Raman Anomalies and Broken Adiabaticity at a Pressure Induced Transition from Band to Topological Insulator in Sb 2 Se 3
journal, March 2013