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Title: Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)- 3 × 3 substrate

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for the Computational Design of Functional Layered Materials (CCDM)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1385399
DOE Contract Number:  
SC0012575
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 90; Journal Issue: 24; Related Information: CCDM partners with Temple University (lead); Brookhaven National Laboratory; Drexel University; Duke University; North Carolina State University; Northeastern University; Princeton University; Rice University; University of Pennsylvania; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
catalysis (heterogeneous), solar (photovoltaic), energy storage (including batteries and capacitors), hydrogen and fuel cells, defects, mechanical behavior, materials and chemistry by design, synthesis (novel materials)

Citation Formats

Huang, Zhi-Quan, Chou, Bo-Hung, Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, and Bansil, Arun. Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)- 3×3 substrate. United States: N. p., 2014. Web. doi:10.1103/PhysRevB.90.245433.
Huang, Zhi-Quan, Chou, Bo-Hung, Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, & Bansil, Arun. Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)- 3×3 substrate. United States. doi:10.1103/PhysRevB.90.245433.
Huang, Zhi-Quan, Chou, Bo-Hung, Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, and Bansil, Arun. Mon . "Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)- 3×3 substrate". United States. doi:10.1103/PhysRevB.90.245433.
@article{osti_1385399,
title = {Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)- 3×3 substrate},
author = {Huang, Zhi-Quan and Chou, Bo-Hung and Hsu, Chia-Hsiu and Chuang, Feng-Chuan and Lin, Hsin and Bansil, Arun},
abstractNote = {},
doi = {10.1103/PhysRevB.90.245433},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 24,
volume = 90,
place = {United States},
year = {2014},
month = {12}
}

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