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Title: Thickness dependence of spin polarization and electronic structure of ultra-thin films of MoS2 and related transition-metal dichalcogenides

Authors:
; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for the Computational Design of Functional Layered Materials (CCDM)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1385396
DOE Contract Number:  
SC0012575
Resource Type:
Journal Article
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 4; Journal Issue: 1; Related Information: CCDM partners with Temple University (lead); Brookhaven National Laboratory; Drexel University; Duke University; North Carolina State University; Northeastern University; Princeton University; Rice University; University of Pennsylvania; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
catalysis (heterogeneous), solar (photovoltaic), energy storage (including batteries and capacitors), hydrogen and fuel cells, defects, mechanical behavior, materials and chemistry by design, synthesis (novel materials)

Citation Formats

Chang, Tay-Rong, Lin, Hsin, Jeng, Horng-Tay, and Bansil, A. Thickness dependence of spin polarization and electronic structure of ultra-thin films of MoS2 and related transition-metal dichalcogenides. United States: N. p., 2014. Web. doi:10.1038/srep06270.
Chang, Tay-Rong, Lin, Hsin, Jeng, Horng-Tay, & Bansil, A. Thickness dependence of spin polarization and electronic structure of ultra-thin films of MoS2 and related transition-metal dichalcogenides. United States. doi:10.1038/srep06270.
Chang, Tay-Rong, Lin, Hsin, Jeng, Horng-Tay, and Bansil, A. Fri . "Thickness dependence of spin polarization and electronic structure of ultra-thin films of MoS2 and related transition-metal dichalcogenides". United States. doi:10.1038/srep06270.
@article{osti_1385396,
title = {Thickness dependence of spin polarization and electronic structure of ultra-thin films of MoS2 and related transition-metal dichalcogenides},
author = {Chang, Tay-Rong and Lin, Hsin and Jeng, Horng-Tay and Bansil, A.},
abstractNote = {},
doi = {10.1038/srep06270},
journal = {Scientific Reports},
issn = {2045-2322},
number = 1,
volume = 4,
place = {United States},
year = {2014},
month = {9}
}

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