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Title: Quantifying the Extent of Contact Doping at the Interface between High Work Function Electrical Contacts and Poly(3-hexylthiophene) (P3HT)

Authors:
 [1];  [2];  [3];  [4];  [2];  [1]
  1. Department of Chemistry and Biochemistry, University of Arizona, 1306 East University Boulevard, Tucson, Arizona 85721, United States
  2. Institute of Materials for Electronics and Energy Technology (I-MEET), Friedrich-Alexander-University Erlangen-Nuremberg, Martensstrasse 7, Erlangen 91058, Germany
  3. Department of Materials Science and Engineering, University of Arizona, 1235 East James E. Rogers Way, Tucson, Arizona 85721, United States
  4. Department of Electrical Engineering, Princeton University, Olden Street, Princeton, New Jersey 08544, United States
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Interface Science: Solar Electric Materials (CISSEM)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1384925
DOE Contract Number:
SC0001084
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Physical Chemistry Letters; Journal Volume: 6; Journal Issue: 8; Related Information: CISSEM partners with the University of Arizona (lead); Georgia Institute of Technology; National Renewable Energy Laboratory; Princeton University; University of Washington
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), electrodes - solar, charge transport, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Shallcross, R. Clayton, Stubhan, Tobias, Ratcliff, Erin L., Kahn, Antoine, Brabec, Christoph J., and Armstrong, Neal R. Quantifying the Extent of Contact Doping at the Interface between High Work Function Electrical Contacts and Poly(3-hexylthiophene) (P3HT). United States: N. p., 2015. Web. doi:10.1021/acs.jpclett.5b00444.
Shallcross, R. Clayton, Stubhan, Tobias, Ratcliff, Erin L., Kahn, Antoine, Brabec, Christoph J., & Armstrong, Neal R. Quantifying the Extent of Contact Doping at the Interface between High Work Function Electrical Contacts and Poly(3-hexylthiophene) (P3HT). United States. doi:10.1021/acs.jpclett.5b00444.
Shallcross, R. Clayton, Stubhan, Tobias, Ratcliff, Erin L., Kahn, Antoine, Brabec, Christoph J., and Armstrong, Neal R. Fri . "Quantifying the Extent of Contact Doping at the Interface between High Work Function Electrical Contacts and Poly(3-hexylthiophene) (P3HT)". United States. doi:10.1021/acs.jpclett.5b00444.
@article{osti_1384925,
title = {Quantifying the Extent of Contact Doping at the Interface between High Work Function Electrical Contacts and Poly(3-hexylthiophene) (P3HT)},
author = {Shallcross, R. Clayton and Stubhan, Tobias and Ratcliff, Erin L. and Kahn, Antoine and Brabec, Christoph J. and Armstrong, Neal R.},
abstractNote = {},
doi = {10.1021/acs.jpclett.5b00444},
journal = {Journal of Physical Chemistry Letters},
number = 8,
volume = 6,
place = {United States},
year = {Fri Mar 27 00:00:00 EDT 2015},
month = {Fri Mar 27 00:00:00 EDT 2015}
}