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Title: Imide- and Amide-Functionalized Polymer Semiconductors

Authors:
 [1];  [2];  [3]
  1. Department of Materials Science and Engineering, South University of Science and Technology of China, No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
  2. Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States; Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, United States
  3. Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Argonne-Northwestern Solar Energy Research Center (ANSER)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1384734
DOE Contract Number:
SC0001059
Resource Type:
Journal Article
Resource Relation:
Journal Name: Chemical Reviews; Journal Volume: 114; Journal Issue: 18; Related Information: ANSER partners with Northwestern University (lead); Argonne National Laboratory; University of Chicago; University of Illinois, Urbana-Champaign; Yale University
Country of Publication:
United States
Language:
English
Subject:
catalysis (homogeneous), catalysis (heterogeneous), solar (photovoltaic), solar (fuels), photosynthesis (natural and artificial), bio-inspired, hydrogen and fuel cells, electrodes - solar, defects, charge transport, spin dynamics, membrane, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly)

Citation Formats

Guo, Xugang, Facchetti, Antonio, and Marks, Tobin J. Imide- and Amide-Functionalized Polymer Semiconductors. United States: N. p., 2014. Web. doi:10.1021/cr500225d.
Guo, Xugang, Facchetti, Antonio, & Marks, Tobin J. Imide- and Amide-Functionalized Polymer Semiconductors. United States. doi:10.1021/cr500225d.
Guo, Xugang, Facchetti, Antonio, and Marks, Tobin J. Tue . "Imide- and Amide-Functionalized Polymer Semiconductors". United States. doi:10.1021/cr500225d.
@article{osti_1384734,
title = {Imide- and Amide-Functionalized Polymer Semiconductors},
author = {Guo, Xugang and Facchetti, Antonio and Marks, Tobin J.},
abstractNote = {},
doi = {10.1021/cr500225d},
journal = {Chemical Reviews},
number = 18,
volume = 114,
place = {United States},
year = {Tue Sep 02 00:00:00 EDT 2014},
month = {Tue Sep 02 00:00:00 EDT 2014}
}
  • Highlights: Black-Right-Pointing-Pointer A novel biodegradable and nanostructured PAEI based on two amino acids, was synthesized. Black-Right-Pointing-Pointer ZnO nanoparticles were modified via two different silane coupling agents. Black-Right-Pointing-Pointer PAEI/modified ZnO BNCs were synthesized through ultrasound irradiation. Black-Right-Pointing-Pointer ZnO particles were dispersed homogeneously in PAEI matrix on nanoscale. Black-Right-Pointing-Pointer The effect of ZnO nanoparticles on the properties of synthesized polymer was examined. -- Abstract: A novel biodegradable and nanostructured poly(amide-ester-imide) (PAEI) based on two different amino acids, was synthesized via direct polycondensation of biodegradable N,N Prime -bis[2-(methyl-3-(4-hydroxyphenyl)propanoate)]isophthaldiamide and N,N Prime -(pyromellitoyl)-bis-L-phenylalanine diacid. The resulting polymer was characterized by FT-IR, {sup 1}H NMR,more » specific rotation, elemental analysis, thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) analysis. The synthesized polymer showed good thermal stability with nano and sphere structure. Then PAEI/ZnO bionanocomposites (BNCs) were fabricated via interaction of pure PAEI and ZnO nanoparticles. The surface of ZnO was modified with two different silane coupling agents. PAEI/ZnO BNCs were studied and characterized by FT-IR, XRD, UV/vis, FE-SEM and TEM. The TEM and FE-SEM results indicated that the nanoparticles were dispersed homogeneously in PAEI matrix on nanoscale. Furthermore the effect of ZnO nanoparticle on the thermal stability of the polymer was investigated with TGA and DSC technique.« less
  • Group 4 amide chloride complexes (Me2N)(2)Ht[N(SiMe3)(2)]Cl (1b), [(Me3Si)(2)N](2)MCl2Li(THF)(3)Cl (M = Zr, 2a; Hf, 2b), and [(Me3Si)(2)MCl2MCl2(THF) (M = Zr, 3a; Hf, 3b) and their X-ray crystal structures are reported. An improved synthesis of {[(Me3Si)(2)N]Ti(mu-NSiMe3)Cl}(2) (4) and its use to prepare amide imide {[(Me3Si)(2)N]Ti(mu-NSiMe3)(NMe2}(2) (5) are also presented. X-ray crystal structures of 5 and previously reported complexes (Me2N)(2)Zr[N(SiMe3)(2)]Cl (1a), [(Me3Si)(2)N](2)TiCl2 (6), and [(Me3Si)(2)N]ZrCl3(THF)(2) (7) have been determined. Both 1a and 1b are dimers {[(Me3Si)(2)N](2)TiCl2 (M = Zr, Hf) in the solid state.
  • Binary nitrides of most elements can be prepared under appropriate conditions. These compounds show an extraordinary range of physical and chemical properties, more so than the oxides which they resemble in some respects. The nitrides are classified as ionic, mostly represented by groups 1 and 2; covalent, mostly represented by groups 3 and 4; and interstitial, formed by many metals. As the names imply, the properties of these materials are somewhat predictable, particularly those of the ionic nitrides, which are salt-like, and of the interstitial nitrides, which can be considered as metals with expanded lattices containing nitrogen in interstitial positions.more » The covalent nitrides show a wider range of properties. Some of the latter are solids with very high melting points and low electrical conductivities (such as BN, AlN, and Si[sub 3]N[sub 4]) while others are volatile or can form the basis of polymeric networks (such as (CN)[sub 2] or PN). In addition to these covalent nitrides, there are some that are semiconductors and have limited thermal stabilities (such as Cu[sub 3]N, Zn[sub 3]N[sub 2], and Sn[sub 3]N[sub 4]). It is the latter that appeared to be of interest because of potential applications in the development of electronic devices. Tin nitride was selected for study to expand the rather limited information published in the literature, none of which relates to the preparation of bulk material other than by glow-discharge methods. Also noted are discrepancies such as the reported electrical conductivities that differ by as much as 10[sup 5].« less