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Title: Origin of the High Performance in GeTe-Based Thermoelectric Materials upon Bi 2 Te 3 Doping

Authors:
 [1];  [2];  [3];  [1];  [1];  [3];  [1];  [4];  [5];  [4];  [3];  [2];  [1]
  1. Department of Physics, South University of Science and Technology of China, Shenzhen 518055, P. R. China
  2. Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
  3. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
  4. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States
  5. Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Revolutionary Materials for Solid State Energy Conversion (RMSSEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1384356
DOE Contract Number:
SC0001054
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of the American Chemical Society; Journal Volume: 136; Journal Issue: 32; Related Information: RMSSEC partners with Michigan State University (lead); University of California, Los Angeles; University of Michigan; Northwestern University; Oak Ridge National Laboratory; Ohio State University; Wayne State University
Country of Publication:
United States
Language:
English
Subject:
solar (thermal), phonons, thermal conductivity, thermoelectric, mechanical behavior, charge transport, materials and chemistry by design, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Wu, Di, Zhao, Li-Dong, Hao, Shiqiang, Jiang, Qike, Zheng, Fengshan, Doak, Jeff W., Wu, Haijun, Chi, Hang, Gelbstein, Y., Uher, C., Wolverton, C., Kanatzidis, Mercouri, and He, Jiaqing. Origin of the High Performance in GeTe-Based Thermoelectric Materials upon Bi 2 Te 3 Doping. United States: N. p., 2014. Web. doi:10.1021/ja504896a.
Wu, Di, Zhao, Li-Dong, Hao, Shiqiang, Jiang, Qike, Zheng, Fengshan, Doak, Jeff W., Wu, Haijun, Chi, Hang, Gelbstein, Y., Uher, C., Wolverton, C., Kanatzidis, Mercouri, & He, Jiaqing. Origin of the High Performance in GeTe-Based Thermoelectric Materials upon Bi 2 Te 3 Doping. United States. doi:10.1021/ja504896a.
Wu, Di, Zhao, Li-Dong, Hao, Shiqiang, Jiang, Qike, Zheng, Fengshan, Doak, Jeff W., Wu, Haijun, Chi, Hang, Gelbstein, Y., Uher, C., Wolverton, C., Kanatzidis, Mercouri, and He, Jiaqing. Mon . "Origin of the High Performance in GeTe-Based Thermoelectric Materials upon Bi 2 Te 3 Doping". United States. doi:10.1021/ja504896a.
@article{osti_1384356,
title = {Origin of the High Performance in GeTe-Based Thermoelectric Materials upon Bi 2 Te 3 Doping},
author = {Wu, Di and Zhao, Li-Dong and Hao, Shiqiang and Jiang, Qike and Zheng, Fengshan and Doak, Jeff W. and Wu, Haijun and Chi, Hang and Gelbstein, Y. and Uher, C. and Wolverton, C. and Kanatzidis, Mercouri and He, Jiaqing},
abstractNote = {},
doi = {10.1021/ja504896a},
journal = {Journal of the American Chemical Society},
number = 32,
volume = 136,
place = {United States},
year = {Mon Aug 04 00:00:00 EDT 2014},
month = {Mon Aug 04 00:00:00 EDT 2014}
}