Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Xiao, Xiaoyin; Fischer, Arthur J.; Wang, George T.; Lu, Ping; Koleske, Daniel D.; Coltrin, Michael E.; Wright, Jeremy B.; Liu, Sheng; Brener, Igal; Subramania, Ganapathi S.; Tsao, Jeffrey Y.

doi:10.1021/nl502151k

Title: Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Journal Article · Mon Sep 08 00:00:00 EDT 2014 · Nano Letters

DOI:https://doi.org/10.1021/nl502151k· OSTI ID:1384198

Xiao, Xiaoyin ^[1]; Fischer, Arthur J. ^[1]; Wang, George T. ^[1]; Lu, Ping ^[1]; Koleske, Daniel D. ^[1]; Coltrin, Michael E. ^[1]; Wright, Jeremy B. ^[1]; Liu, Sheng ^[1]; Brener, Igal ^[1]; Subramania, Ganapathi S. ^[1]; Tsao, Jeffrey Y. ^[1]

Solid-State Lighting Science Energy Frontier Research Center and ‡Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States

Cite

Export

Save

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1384198

Journal Information:: Nano Letters, Vol. 14, Issue 10; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting; ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

References (26)

A gallium nitride single-photon source operating at 200 K Kako, Satoshi; Santori, Charles; Hoshino, Katsuyuki Nature Materials, Vol. 5, Issue 11 https://doi.org/10.1038/nmat1763	journal	October 2006
Optical microcavities Vahala, Kerry J. Nature, Vol. 424, Issue 6950, p. 839-846 https://doi.org/10.1038/nature01939	journal	August 2003
Electron–electron and electron‐hole interactions in small semiconductor crystallites: The size dependence of the lowest excited electronic state Brus, L. E. The Journal of Chemical Physics, Vol. 80, Issue 9 https://doi.org/10.1063/1.447218	journal	May 1984
Preparation of Monodisperse CdS Nanocrystals by Size Selective Photocorrosion Matsumoto, Hajime; Sakata, Takao; Mori, Hirotaro The Journal of Physical Chemistry, Vol. 100, Issue 32 https://doi.org/10.1021/jp960834x	journal	January 1996
Characterization of Ultrasmall CdS Nanoparticles Prepared by the Size-Selective Photoetching Technique Torimoto, Tsukasa; Kontani, Hironori; Shibutani, Yoshihiro The Journal of Physical Chemistry B, Vol. 105, Issue 29 https://doi.org/10.1021/jp0109271	journal	July 2001
Size-Selective Photoetching of Nanocrystalline Semiconductor Particles van Dijken, A.; Janssen, A. H.; Smitsmans, M. H. P. Chemistry of Materials, Vol. 10, Issue 11 https://doi.org/10.1021/cm980715p	journal	November 1998
Photoelectrochemistry Bard, A. J. Science, Vol. 207, Issue 4427 https://doi.org/10.1126/science.207.4427.139	journal	January 1980
Photoelectrochemical etching of semiconductors Kohl, P. A. IBM Journal of Research and Development, Vol. 42, Issue 5 https://doi.org/10.1147/rd.425.0629	journal	September 1998
Finite depth square well model: Applicability and limitations Pellegrini, Giovanni; Mattei, Giovanni; Mazzoldi, Paolo Journal of Applied Physics, Vol. 97, Issue 7 https://doi.org/10.1063/1.1868875	journal	April 2005
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes Nakamura, S. Science, Vol. 281, Issue 5379 https://doi.org/10.1126/science.281.5379.956	journal	August 1998
Research challenges to ultra-efficient inorganic solid-state lighting Phillips, J. M.; Coltrin, M. E.; Crawford, M. H. Laser & Photonics Review, Vol. 1, Issue 4, p. 307-333 https://doi.org/10.1002/lpor.200710019	journal	December 2007
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki Nature, Vol. 441, Issue 7091, p. 325-328 https://doi.org/10.1038/nature04760	journal	May 2006
Progress in GaN-based quantum dots for optoelectronics applications Arakawa, Y. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 4 https://doi.org/10.1109/JSTQE.2002.801675	journal	July 2002
A InGaN/GaN quantum dot green (λ=524 nm) laser Zhang, Meng; Banerjee, Animesh; Lee, Chi-Sen Applied Physics Letters, Vol. 98, Issue 22 https://doi.org/10.1063/1.3596436	journal	May 2011
Comparison between blue lasers and light-emitting diodes for future solid-state lighting Comparison between blue lasers and light-emitting diodes Wierer, Jonathan J.; Tsao, Jeffrey Y.; Sizov, Dmitry S. Laser & Photonics Reviews, Vol. 7, Issue 6, p. 963-993 https://doi.org/10.1002/lpor.201300048	journal	August 2013
Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence Koleske, D. D.; Fischer, A. J.; Allerman, A. A. Applied Physics Letters, Vol. 81, Issue 11 https://doi.org/10.1063/1.1506793	journal	September 2002
Room‐temperature photoenhanced wet etching of GaN Minsky, M. S.; White, M.; Hu, E. L. Applied Physics Letters, Vol. 68, Issue 11 https://doi.org/10.1063/1.115689	journal	March 1996
Resonantly enhanced selective photochemical etching of GaN Trichas, E.; Kayambaki, M.; Iliopoulos, E. Applied Physics Letters, Vol. 94, Issue 17 https://doi.org/10.1063/1.3122932	journal	April 2009
Effects of Photoelectrochemical Etching of N-Polar and Ga-Polar Gallium Nitride on Sapphire Substrates Jung, Younghun; Baik, Kwang Hyeon; Ren, Fan Journal of The Electrochemical Society, Vol. 157, Issue 6 https://doi.org/10.1149/1.3384713	journal	January 2010
Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations Youtsey, C.; Romano, L. T.; Adesida, I. Applied Physics Letters, Vol. 73, Issue 6 https://doi.org/10.1063/1.122005	journal	August 1998
Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride Gao, Y.; Craven, M. D.; Speck, J. S. Applied Physics Letters, Vol. 84, Issue 17 https://doi.org/10.1063/1.1719281	journal	April 2004
High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers Akasaka, Tetsuya; Gotoh, Hideki; Saito, Tadashi Applied Physics Letters, Vol. 85, Issue 15 https://doi.org/10.1063/1.1804607	journal	October 2004
Narrow photoluminescence peaks from localized states in InGaN quantum dot structures Moriwaki, Osamu; Someya, Takao; Tachibana, Koichi Applied Physics Letters, Vol. 76, Issue 17 https://doi.org/10.1063/1.126346	journal	April 2000
Tuning of the fluorescence wavelength of CdTe quantum dots with 2 nm resolution by size-selective photoetching Uematsu, T.; Kitajima, H.; Kohma, T. Nanotechnology, Vol. 20, Issue 21 https://doi.org/10.1088/0957-4484/20/21/215302	journal	May 2009
Record-Low Inhomogeneous Broadening of Site-Controlled Quantum Dots for Nanophotonics Mohan, Arun; Gallo, Pascal; Felici, Marco Small, Vol. 6, Issue 12 https://doi.org/10.1002/smll.201000341	journal	May 2010
Electrifying cavities Oulton, Ruth Nature Nanotechnology, Vol. 9, Issue 3 https://doi.org/10.1038/nnano.2014.41	journal	March 2014

Cited By (8)

III‐Nitride Micro‐LEDs for Efficient Emissive Displays Wierer, Jonathan J.; Tansu, Nelson Laser & Photonics Reviews, Vol. 13, Issue 9 https://doi.org/10.1002/lpor.201900141	journal	August 2019
Scalable high-precision tuning of photonic resonators by resonant cavity-enhanced photoelectrochemical etching Gil-Santos, Eduardo; Baker, Christopher; Lemaître, Aristide Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms14267	journal	January 2017
Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching Wei, Xiongliang; Al Muyeed, Syed Ahmed; Peart, Matthew R. Applied Physics Letters, Vol. 113, Issue 12 https://doi.org/10.1063/1.5046857	journal	September 2018
Single photon emission from top-down etched III-nitride quantum dots Hou, Yaonan; Wang, Yong; Ai, Qingkang Nanotechnology, Vol. 31, Issue 13 https://doi.org/10.1088/1361-6528/ab6477	journal	January 2020
Formation of spherical-shaped GaN and InN quantum dots on curved SiN/Si surface Choi, Ilgyu; Lee, Hyunjoong; Lee, Cheul-Ro Nanotechnology, Vol. 29, Issue 31 https://doi.org/10.1088/1361-6528/aac414	journal	June 2018
III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures Anderson, P. Duke; Fischer, Arthur J.; Koleske, Daniel D. Optical Materials Express, Vol. 8, Issue 11 https://doi.org/10.1364/ome.8.003543	journal	January 2018
3D Photoluminescent Nanostructures Containing Quantum Dots Fabricated by Two-Photon Polymerization: Influence of Quantum Dots on the Spatial Resolution of Laser Writing Peng, Ying; Jradi, Safi; Yang, Xuyong Advanced Materials Technologies, Vol. 4, Issue 2 https://doi.org/10.1002/admt.201800522	journal	November 2018
Author Correction: Scalable high-precision tuning of photonic resonators by resonant cavity-enhanced photoelectrochemical etching Gil-Santos, Eduardo; Baker, Christopher; Lemaître, Aristide Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-05788-z	journal	August 2018

Similar Records

Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Journal Article · Wed Oct 08 00:00:00 EDT 2014 · Nano Letters · OSTI ID:1384198

Xiao, Xiaoyin; Fischer, Arthur J.; Wang, George T.; +8 more

Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Journal Article · Fri Aug 29 00:00:00 EDT 2014 · Nano Letters · OSTI ID:1384198

Xiao, Xiaoyin; Fischer, Arthur J.; Wang, George T.; +8 more

Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

Journal Article · Wed Nov 18 00:00:00 EST 2015 · Journal of Physical Chemistry. C · OSTI ID:1384198

Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.; +4 more

Related Subjects

solar (photovoltaic)
solid state lighting
phonons
materials and chemistry by design
optics
synthesis (novel materials)

Title: Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Citation Formats

References (26)

Cited By (8)

Similar Records

Related Subjects