Analysis of bulk heterojunction material parameters using lateral device structures

Journal Article · Wed Jan 01 00:00:00 EST 2014 · Journal of Photonics for Energy

DOI:https://doi.org/10.1117/1.JPE.4.040994· OSTI ID:1384036

Danielson, Eric ^[1]; Ooi, Zi-En ^[2]; Liang, Kelly ^[3]; Morris, Joshua ^[4]; Lombardo, Christopher ^[5]; Dodabalapur, Ananth ^[3]

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1. University of Texas at Austin, Microelectronics Research Center, Austin, Texas 78758bUniversity of Texas at Austin, Materials Science and Engineering Program, Austin, Texas 78712
2. Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 3 Research Link, Singapore 117602, Republic of Singapore
3. University of Texas at Austin, Microelectronics Research Center, Austin, Texas 78758dUniversity of Texas at Austin, Department of Electrical and Computer Engineering, Austin, Texas 78712
4. University of Texas at Austin, Department of Chemistry and Biochemistry, Austin, Texas 78759
5. Harvard School of Engineering and Applied Sciences, 29 Oxford Street, Cambridge, Massachusetts 02138

• Research Organization: Energy Frontier Research Centers (EFRC) (United States). Understanding Charge Separation and Transfer at Interfaces in Energy Materials (CST)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: SC0001091
• OSTI ID: 1384036
• Journal Information: Journal of Photonics for Energy, Vol. 4, Issue 1; Related Information: CST partners with University of Texas at Austin (lead); Sandia National Laboratories; ISSN 1947-7988
• Publisher: SPIE
• Country of Publication: United States
• Language: English

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