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Title: Photon quenching in InGaN quantum well light emitting devices

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Energy Nanoscience (CEN)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1383820
DOE Contract Number:  
SC0001013
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 4; Related Information: CEN partners with University of Southern California (lead); University of Illinois, Urbana-Champaign; University of Michigan; University of Virginia; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solar (fuels), solid state lighting, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Sarkissian, Raymond, Roberts, Sean T., Yeh, Ting-Wei, Das, Saptaparna, Bradforth, Stephen E., O'Brien, John, and Daniel Dapkus, P. Photon quenching in InGaN quantum well light emitting devices. United States: N. p., 2013. Web. doi:10.1063/1.4816757.
Sarkissian, Raymond, Roberts, Sean T., Yeh, Ting-Wei, Das, Saptaparna, Bradforth, Stephen E., O'Brien, John, & Daniel Dapkus, P. Photon quenching in InGaN quantum well light emitting devices. United States. doi:10.1063/1.4816757.
Sarkissian, Raymond, Roberts, Sean T., Yeh, Ting-Wei, Das, Saptaparna, Bradforth, Stephen E., O'Brien, John, and Daniel Dapkus, P. Mon . "Photon quenching in InGaN quantum well light emitting devices". United States. doi:10.1063/1.4816757.
@article{osti_1383820,
title = {Photon quenching in InGaN quantum well light emitting devices},
author = {Sarkissian, Raymond and Roberts, Sean T. and Yeh, Ting-Wei and Das, Saptaparna and Bradforth, Stephen E. and O'Brien, John and Daniel Dapkus, P.},
abstractNote = {},
doi = {10.1063/1.4816757},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 4,
volume = 103,
place = {United States},
year = {2013},
month = {7}
}

Works referenced in this record:

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Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer
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