Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

Seyedi, M. A.; Yao, M.; O'Brien, J.; Wang, S. Y.; Dapkus, P. D.

doi:10.1063/1.4852136

Title: Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

Journal Article · Mon Dec 16 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4852136· OSTI ID:1383817

Seyedi, M. A.; Yao, M.; O'Brien, J.; Wang, S. Y.; Dapkus, P. D.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Energy Nanoscience (CEN)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: SC0001013

OSTI ID:: 1383817

Journal Information:: Applied Physics Letters, Vol. 103, Issue 25; Related Information: CEN partners with University of Southern California (lead); University of Illinois, Urbana-Champaign; University of Michigan; University of Virginia; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

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Impact of surfaces on the optical properties of GaAs nanowires Demichel, O.; Heiss, M.; Bleuse, J. Applied Physics Letters, Vol. 97, Issue 20 https://doi.org/10.1063/1.3519980	journal	November 2010
Semiconducting and other major properties of gallium arsenide Blakemore, J. S. Journal of Applied Physics, Vol. 53, Issue 10 https://doi.org/10.1063/1.331665	journal	October 1982
The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures Fowler, R. H. Physical Review, Vol. 38, Issue 1, p. 45-56 https://doi.org/10.1103/PhysRev.38.45	journal	July 1931
Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array photoanodes Hu, Shu; Chi, Chun-Yung; Fountaine, Katherine T. Energy & Environmental Science, Vol. 6, Issue 6 https://doi.org/10.1039/c3ee40243f	journal	January 2013
Extraction of Schottky diode parameters from forward current‐voltage characteristics Cheung, S. K.; Cheung, N. W. Applied Physics Letters, Vol. 49, Issue 2 https://doi.org/10.1063/1.97359	journal	July 1986
Optical absorption enhancement in silicon nanowire arrays with a large lattice constant for photovoltaic applications Lin, Chenxi; Povinelli, Michelle L. Optics Express, Vol. 17, Issue 22 https://doi.org/10.1364/OE.17.019371	journal	January 2009
30 Gbit/s, 850 nm, VCSEL-based optical link Schow, C. L.; Rylyakov, A. V. Electronics Letters, Vol. 47, Issue 18 https://doi.org/10.1049/el.2011.2239	journal	January 2011
Wurtzite InP nanowire arrays grown by selective area MOCVD Chu, Hyung‐Joon; Yeh, Ting‐Wei; Stewart, Lawrence physica status solidi c, Vol. 7, Issue 10 https://doi.org/10.1002/pssc.200983910	journal	June 2010
High quality ITO thin films grown by dc and RF sputtering without oxygen Tuna, Ocal; Selamet, Yusuf; Aygun, Gulnur Journal of Physics D: Applied Physics, Vol. 43, Issue 5 https://doi.org/10.1088/0022-3727/43/5/055402	journal	January 2010
Efficiency Enhancement of InP Nanowire Solar Cells by Surface Cleaning Cui, Yingchao; Wang, Jia; Plissard, Sebastien R. Nano Letters, Vol. 13, Issue 9 https://doi.org/10.1021/nl4016182	journal	August 2013
Structures and properties of electron‐beam‐evaporated indium tin oxide films as studied by x‐ray photoelectron spectroscopy and work‐function measurements Ishida, T.; Kobayashi, H.; Nakato, Y. Journal of Applied Physics, Vol. 73, Issue 9 https://doi.org/10.1063/1.352818	journal	May 1993
High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer Li, Zhi; Pan, Huapu; Chen, Hao IEEE Journal of Quantum Electronics, Vol. 46, Issue 5 https://doi.org/10.1109/JQE.2010.2046140	journal	May 2010

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