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Title: Effects of twins on the electronic properties of GaAs

Authors:
; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Energy Nanoscience (CEN)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1383793
DOE Contract Number:  
SC0001013
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 2; Related Information: CEN partners with University of Southern California (lead); University of Illinois, Urbana-Champaign; University of Michigan; University of Virginia; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solar (fuels), solid state lighting, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Shimamura, Kohei, Yuan, Zaoshi, Shimojo, Fuyuki, and Nakano, Aiichiro. Effects of twins on the electronic properties of GaAs. United States: N. p., 2013. Web. doi:10.1063/1.4811746.
Shimamura, Kohei, Yuan, Zaoshi, Shimojo, Fuyuki, & Nakano, Aiichiro. Effects of twins on the electronic properties of GaAs. United States. doi:10.1063/1.4811746.
Shimamura, Kohei, Yuan, Zaoshi, Shimojo, Fuyuki, and Nakano, Aiichiro. Mon . "Effects of twins on the electronic properties of GaAs". United States. doi:10.1063/1.4811746.
@article{osti_1383793,
title = {Effects of twins on the electronic properties of GaAs},
author = {Shimamura, Kohei and Yuan, Zaoshi and Shimojo, Fuyuki and Nakano, Aiichiro},
abstractNote = {},
doi = {10.1063/1.4811746},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 2,
volume = 103,
place = {United States},
year = {2013},
month = {7}
}

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