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Title: Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge2Sb2Te5 phase-change memory material

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Energy Frontier Research in Extreme Environments (EFree)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1383779
DOE Contract Number:  
SC0001057
Resource Type:
Journal Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Volume: 108; Journal Issue: 26; Related Information: EFree partners with Carnegie Institution of Washington (lead); California Institute of Technology; Colorado School of Mines; Cornell University; Lehigh University; Pennsylvania State University; Journal ID: ISSN 0027-8424
Publisher:
National Academy of Sciences, Washington, DC (United States)
Country of Publication:
United States
Language:
English
Subject:
catalysis (heterogeneous), solar (photovoltaic), phonons, thermoelectric, energy storage (including batteries and capacitors), hydrogen and fuel cells, superconductivity, charge transport, mesostructured materials, materials and chemistry by design, synthesis (novel materials)

Citation Formats

Sun, Z., Zhou, J., Pan, Y., Song, Z., Mao, H. -K., and Ahuja, R. Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge2Sb2Te5 phase-change memory material. United States: N. p., 2011. Web. doi:10.1073/pnas.1107464108.
Sun, Z., Zhou, J., Pan, Y., Song, Z., Mao, H. -K., & Ahuja, R. Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge2Sb2Te5 phase-change memory material. United States. doi:10.1073/pnas.1107464108.
Sun, Z., Zhou, J., Pan, Y., Song, Z., Mao, H. -K., and Ahuja, R. Mon . "Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge2Sb2Te5 phase-change memory material". United States. doi:10.1073/pnas.1107464108.
@article{osti_1383779,
title = {Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge2Sb2Te5 phase-change memory material},
author = {Sun, Z. and Zhou, J. and Pan, Y. and Song, Z. and Mao, H. -K. and Ahuja, R.},
abstractNote = {},
doi = {10.1073/pnas.1107464108},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
issn = {0027-8424},
number = 26,
volume = 108,
place = {United States},
year = {2011},
month = {6}
}

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