skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Correlation of doping, structure, and carrier dynamics in a single GaN nanorod

Authors:
; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1383673
DOE Contract Number:  
SC0001088
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 102; Journal Issue: 25; Related Information: CE partners with Massachusetts Institute of Technology (lead); Brookhaven National Laboratory; Harvard University; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solid state lighting, photosynthesis (natural and artificial), charge transport, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Zhou, Xiang, Lu, Ming-Yen, Lu, Yu-Jung, Gwo, Shangjr, and Gradečak, Silvija. Correlation of doping, structure, and carrier dynamics in a single GaN nanorod. United States: N. p., 2013. Web. doi:10.1063/1.4812241.
Zhou, Xiang, Lu, Ming-Yen, Lu, Yu-Jung, Gwo, Shangjr, & Gradečak, Silvija. Correlation of doping, structure, and carrier dynamics in a single GaN nanorod. United States. doi:10.1063/1.4812241.
Zhou, Xiang, Lu, Ming-Yen, Lu, Yu-Jung, Gwo, Shangjr, and Gradečak, Silvija. Mon . "Correlation of doping, structure, and carrier dynamics in a single GaN nanorod". United States. doi:10.1063/1.4812241.
@article{osti_1383673,
title = {Correlation of doping, structure, and carrier dynamics in a single GaN nanorod},
author = {Zhou, Xiang and Lu, Ming-Yen and Lu, Yu-Jung and Gwo, Shangjr and Gradečak, Silvija},
abstractNote = {},
doi = {10.1063/1.4812241},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 25,
volume = 102,
place = {United States},
year = {2013},
month = {6}
}

Works referenced in this record:

Temperature quenching of photoluminescence intensities in undoped and doped GaN
journal, October 1999

  • Leroux, M.; Grandjean, N.; Beaumont, B.
  • Journal of Applied Physics, Vol. 86, Issue 7
  • DOI: 10.1063/1.371242

Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes
journal, November 2005

  • Qian, Fang; Gradečak, Silvija; Li, Yat
  • Nano Letters, Vol. 5, Issue 11
  • DOI: 10.1021/nl051689e

Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires
journal, March 2011

  • Baird, Lee; Ong, C. P.; Cole, R. Adam
  • Applied Physics Letters, Vol. 98, Issue 13
  • DOI: 10.1063/1.3573832

Plasmonic Nanolaser Using Epitaxially Grown Silver Film
journal, July 2012


GaAs nanopillar-array solar cells employing in situ surface passivation
journal, February 2013

  • Mariani, Giacomo; Scofield, Adam C.; Hung, Chung-Hong
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms2509

Secondary electron doping contrast: Theory based on scanning electron microscope and Kelvin probe force microscopy measurements
journal, January 2010

  • Volotsenko, I.; Molotskii, M.; Barkay, Z.
  • Journal of Applied Physics, Vol. 107, Issue 1
  • DOI: 10.1063/1.3276090

Role of Au in the Growth and Nanoscale Optical Properties of ZnO Nanowires
journal, February 2011

  • Brewster, Megan M.; Zhou, Xiang; Lim, Sung Keun
  • The Journal of Physical Chemistry Letters, Vol. 2, Issue 6
  • DOI: 10.1021/jz200129x

Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers
journal, August 2008

  • Qian, Fang; Li, Yat; Gradečak, Silvija
  • Nature Materials, Vol. 7, Issue 9
  • DOI: 10.1038/nmat2253

Electrical and Optical Characterization of Surface Passivation in GaAs Nanowires
journal, January 2012

  • Chang, Chia-Chi; Chi, Chun-Yung; Yao, Maoqing
  • Nano Letters, Vol. 12, Issue 9
  • DOI: 10.1021/nl301391h

GaN nanowire lasers with low lasing thresholds
journal, October 2005

  • Gradečak, Silvija; Qian, Fang; Li, Yat
  • Applied Physics Letters, Vol. 87, Issue 17
  • DOI: 10.1063/1.2115087

Direct Correlation between Structural and Optical Properties of III−V Nitride Nanowire Heterostructures with Nanoscale Resolution
journal, November 2009

  • Lim, Sung K.; Brewster, Megan; Qian, Fang
  • Nano Letters, Vol. 9, Issue 11
  • DOI: 10.1021/nl9025743

Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure
journal, February 2011

  • Zagonel, Luiz Fernando; Mazzucco, Stefano; Tencé, Marcel
  • Nano Letters, Vol. 11, Issue 2
  • DOI: 10.1021/nl103549t

On p‐ type doping in GaN—acceptor binding energies
journal, August 1995

  • Fischer, S.; Wetzel, C.; Haller, E. E.
  • Applied Physics Letters, Vol. 67, Issue 9
  • DOI: 10.1063/1.114403

The Growth and Optical Properties of ZnO Nanowalls
journal, July 2011

  • Brewster, Megan M.; Lu, Ming-Yen; Lim, Sung Keun
  • The Journal of Physical Chemistry Letters, Vol. 2, Issue 15
  • DOI: 10.1021/jz2008775

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
journal, January 2005

  • Kumakura, K.; Makimoto, T.; Kobayashi, N.
  • Applied Physics Letters, Vol. 86, Issue 5
  • DOI: 10.1063/1.1861116