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Title: Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In 2 O 3 films

Authors:
; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1383254
DOE Contract Number:  
SC0001009
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 88; Journal Issue: 8; Related Information: CEEM partners with the University of California, Santa Barbara (lead); Purdue University; Los Alamos National Laboratory; National Renewable Energy Laboratory; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Preissler, Natalie, Bierwagen, Oliver, Ramu, Ashok T., and Speck, James S. Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In 2 O 3 films. United States: N. p., 2013. Web. doi:10.1103/PhysRevB.88.085305.
Preissler, Natalie, Bierwagen, Oliver, Ramu, Ashok T., & Speck, James S. Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In 2 O 3 films. United States. doi:10.1103/PhysRevB.88.085305.
Preissler, Natalie, Bierwagen, Oliver, Ramu, Ashok T., and Speck, James S. Thu . "Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In 2 O 3 films". United States. doi:10.1103/PhysRevB.88.085305.
@article{osti_1383254,
title = {Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In 2 O 3 films},
author = {Preissler, Natalie and Bierwagen, Oliver and Ramu, Ashok T. and Speck, James S.},
abstractNote = {},
doi = {10.1103/PhysRevB.88.085305},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 8,
volume = 88,
place = {United States},
year = {2013},
month = {8}
}

Works referenced in this record:

Highly electrically conductive indium–tin–oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition
journal, May 2000

  • Ohta, Hiromichi; Orita, Masahiro; Hirano, Masahiro
  • Applied Physics Letters, Vol. 76, Issue 19
  • DOI: 10.1063/1.126461

Electron Mobility in Direct-Gap Polar Semiconductors
journal, August 1970


The thermoelectric power in In2O3
journal, May 1978


High temperature Seebeck coefficient metrology
journal, December 2010

  • Martin, J.; Tritt, T.; Uher, C.
  • Journal of Applied Physics, Vol. 108, Issue 12, Article No. 121101
  • DOI: 10.1063/1.3503505

Infrared lattice vibrations of In2O3
journal, January 1990

  • Sobotta, H.; Neumann, H.; Kühn, G.
  • Crystal Research and Technology, Vol. 25, Issue 1
  • DOI: 10.1002/crat.2170250112

Evaporated Sn‐doped In 2 O 3 films: Basic optical properties and applications to energy‐efficient windows
journal, December 1986

  • Hamberg, I.; Granqvist, C. G.
  • Journal of Applied Physics, Vol. 60, Issue 11
  • DOI: 10.1063/1.337534

Band Structure and Transport Properties of Some 3–5 Compounds
journal, October 1961

  • Ehrenreich, H.
  • Journal of Applied Physics, Vol. 32, Issue 10
  • DOI: 10.1063/1.1777035

Hydrogen-doped In2O3 transparent conducting oxide films prepared by solid-phase crystallization method
journal, February 2010

  • Koida, Takashi; Kondo, Michio; Tsutsumi, Koichi
  • Journal of Applied Physics, Vol. 107, Issue 3
  • DOI: 10.1063/1.3284960

Refinement of the crystal structure of In 2 O 3 at two wavelengths
journal, November 1966


Microscopic Origin of Electron Accumulation in In 2 O 3
journal, January 2013


Tin doped indium oxide thin films: Electrical properties
journal, March 1998

  • Bel Hadj Tahar, Radhouane; Ban, Takayuki; Ohya, Yutaka
  • Journal of Applied Physics, Vol. 83, Issue 5
  • DOI: 10.1063/1.367025

Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN
journal, December 2011


An accurate approximation of the generalized einstein relation for degenerate semiconductors
journal, September 1973


Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3
journal, May 2009


Electrical resistivities and thermopowers of transparent Sn-doped indium oxide films
journal, November 2004

  • Li, Z. Q.; Lin, J. J.
  • Journal of Applied Physics, Vol. 96, Issue 10
  • DOI: 10.1063/1.1801153

Indium-oxide polymorphs from first principles: Quasiparticle electronic states
journal, April 2008


Electrical properties of bulk ZnO
journal, February 1998


Causes of incorrect carrier-type identification in van der Pauw–Hall measurements
journal, December 2008

  • Bierwagen, Oliver; Ive, Tommy; Van de Walle, Chris G.
  • Applied Physics Letters, Vol. 93, Issue 24
  • DOI: 10.1063/1.3052930

Band Structure and Electron Transport of GaAs
journal, December 1960


Thermoelectric figure of merit of ( In 0.53 Ga 0.47 As ) 0.8 ( In 0.52 Al 0.48 As ) 0.2 III-V semiconductor alloys
journal, June 2010


Review Lecture: Metal-Insulator Transitions
journal, July 1982

  • Mott, N.
  • Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 382, Issue 1782
  • DOI: 10.1098/rspa.1982.0086

Nucleation of islands and continuous high-quality In2O3(001) films during plasma-assisted molecular beam epitaxy on Y-stabilized ZrO2(001)
journal, June 2010

  • Bierwagen, Oliver; Speck, James S.
  • Journal of Applied Physics, Vol. 107, Issue 11
  • DOI: 10.1063/1.3415539

Optical Properties of Indium Oxide
journal, January 1966

  • Weiher, R. L.; Ley, R. P.
  • Journal of Applied Physics, Vol. 37, Issue 1
  • DOI: 10.1063/1.1707830

Electrical Properties of Single Crystals of Indium Oxide
journal, September 1962


The low temperature heat capacities of SnO2 and In2O3
journal, September 1981

  • Bachmann, K. J.; Hsu, F. S. L.; Remeika, J. P.
  • Physica Status Solidi (a), Vol. 67, Issue 1
  • DOI: 10.1002/pssa.2210670144

Thermoelectric power calculation by the Boltzmann equation: Na x CoO 2
journal, August 2007


Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials
journal, April 2010

  • Ramu, Ashok T.; Cassels, Laura E.; Hackman, Nathan H.
  • Journal of Applied Physics, Vol. 107, Issue 8
  • DOI: 10.1063/1.3366712

Thickness dependence of the strain, band gap and transport properties of epitaxial In 2 O 3 thin films grown on Y-stabilised ZrO 2 (111)
journal, August 2011