skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Influence of growth temperature and temperature ramps on deep level defect incorporation in m -plane GaN

Authors:
; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1382878
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 23; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solid state lighting, phonons, materials and chemistry by design, optics, synthesis (novel materials)

Citation Formats

Armstrong, A. M., Kelchner, K., Nakamura, S., DenBaars, S. P., and Speck, J. S. Influence of growth temperature and temperature ramps on deep level defect incorporation in m -plane GaN. United States: N. p., 2013. Web. doi:10.1063/1.4841575.
Armstrong, A. M., Kelchner, K., Nakamura, S., DenBaars, S. P., & Speck, J. S. Influence of growth temperature and temperature ramps on deep level defect incorporation in m -plane GaN. United States. doi:10.1063/1.4841575.
Armstrong, A. M., Kelchner, K., Nakamura, S., DenBaars, S. P., and Speck, J. S. Mon . "Influence of growth temperature and temperature ramps on deep level defect incorporation in m -plane GaN". United States. doi:10.1063/1.4841575.
@article{osti_1382878,
title = {Influence of growth temperature and temperature ramps on deep level defect incorporation in m -plane GaN},
author = {Armstrong, A. M. and Kelchner, K. and Nakamura, S. and DenBaars, S. P. and Speck, J. S.},
abstractNote = {},
doi = {10.1063/1.4841575},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 103,
place = {United States},
year = {2013},
month = {12}
}

Works referenced in this record:

First-principles calculations for defects and impurities: Applications to III-nitrides
journal, April 2004

  • Van de Walle, Chris G.; Neugebauer, Jörg
  • Journal of Applied Physics, Vol. 95, Issue 8
  • DOI: 10.1063/1.1682673

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping
journal, March 2010

  • Noemaun, Ahmed N.; Schubert, Martin F.; Cho, Jaehee
  • Applied Physics Letters, Vol. 96, Issue 12
  • DOI: 10.1063/1.3371812

Role of carbon in GaN
journal, December 2002

  • Seager, C. H.; Wright, A. F.; Yu, J.
  • Journal of Applied Physics, Vol. 92, Issue 11
  • DOI: 10.1063/1.1518794

Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
journal, September 2005

  • Armstrong, A.; Arehart, A. R.; Green, D.
  • Journal of Applied Physics, Vol. 98, Issue 5
  • DOI: 10.1063/1.2005379

Carbon impurities and the yellow luminescence in GaN
journal, October 2010

  • Lyons, J. L.; Janotti, A.; Van de Walle, C. G.
  • Applied Physics Letters, Vol. 97, Issue 15
  • DOI: 10.1063/1.3492841

Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
journal, June 2010

  • Farrell, R. M.; Haeger, D. A.; Chen, X.
  • Applied Physics Letters, Vol. 96, Issue 23
  • DOI: 10.1063/1.3447926

Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN
journal, November 2007

  • Hirai, A.; Jia, Z.; Schmidt, M. C.
  • Applied Physics Letters, Vol. 91, Issue 19
  • DOI: 10.1063/1.2802570

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
journal, July 2002