Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors
Journal Article
·
· Semiconductor Science and Technology
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1382677
- Journal Information:
- Semiconductor Science and Technology, Vol. 28, Issue 7; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting; ISSN 0268-1242
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
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