skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Comparison between blue lasers and light-emitting diodes for future solid-state lighting: Comparison between blue lasers and light-emitting diodes

Authors:
 [1];  [1];  [2]
  1. Sandia National Laboratories, Albuquerque NM 87185 USA
  2. Corning Incorporated, One Science Center Dr., Corning NY 14831 USA
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1382673
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Laser & Photonics Reviews
Additional Journal Information:
Journal Volume: 7; Journal Issue: 6; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting; Journal ID: ISSN 1863-8880
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solid state lighting, phonons, materials and chemistry by design, optics, synthesis (novel materials)

Citation Formats

Wierer, Jonathan J., Tsao, Jeffrey Y., and Sizov, Dmitry S. Comparison between blue lasers and light-emitting diodes for future solid-state lighting: Comparison between blue lasers and light-emitting diodes. United States: N. p., 2013. Web. doi:10.1002/lpor.201300048.
Wierer, Jonathan J., Tsao, Jeffrey Y., & Sizov, Dmitry S. Comparison between blue lasers and light-emitting diodes for future solid-state lighting: Comparison between blue lasers and light-emitting diodes. United States. https://doi.org/10.1002/lpor.201300048
Wierer, Jonathan J., Tsao, Jeffrey Y., and Sizov, Dmitry S. 2013. "Comparison between blue lasers and light-emitting diodes for future solid-state lighting: Comparison between blue lasers and light-emitting diodes". United States. https://doi.org/10.1002/lpor.201300048.
@article{osti_1382673,
title = {Comparison between blue lasers and light-emitting diodes for future solid-state lighting: Comparison between blue lasers and light-emitting diodes},
author = {Wierer, Jonathan J. and Tsao, Jeffrey Y. and Sizov, Dmitry S.},
abstractNote = {},
doi = {10.1002/lpor.201300048},
url = {https://www.osti.gov/biblio/1382673}, journal = {Laser & Photonics Reviews},
issn = {1863-8880},
number = 6,
volume = 7,
place = {United States},
year = {Thu Aug 01 00:00:00 EDT 2013},
month = {Thu Aug 01 00:00:00 EDT 2013}
}

Works referenced in this record:

Impact of active layer design on InGaN radiative recombination coefficient and LED performance
journal, March 2012


Solid-state lighting: ‘The case’ 10 years after and future prospects
journal, September 2010


30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes
journal, October 1993


Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
journal, June 2007


Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes
journal, September 2011


Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
journal, June 2012


Gallium Indium Nitride-Based Green Lasers
journal, March 2012


Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN
journal, October 2008


Local indium segregation and bang gap variations in high efficiency green light emitting InGaN/GaN diodes
journal, January 2006


Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs
journal, May 2007


Stress relaxation and critical thickness for misfit dislocation formation in (101¯0) and (3031¯) InGaN/GaN heteroepitaxy
journal, April 2012


Performance of high-power III-nitride light emitting diodes
journal, May 2008


Microscopic theory of gain for an InGaN/AlGaN quantum well laser
journal, November 1997


Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes
journal, September 2009


LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
journal, July 2009


Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence
journal, January 2005


Bulk GaN based violet light-emitting diodes with high efficiency at very high current density
journal, November 2012


Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
journal, December 2007


High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes
journal, June 2012


On the importance of radiative and Auger losses in GaN-based quantum wells
journal, June 2008


Electronic and Optical Properties of ${\rm a}$- and ${\rm m}$-Plane Wurtzite InGaN–GaN Quantum Wells
journal, December 2007


Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
journal, October 2010


GaN decomposition in H2 and N2 at MOVPE temperatures and pressures
journal, March 2001


On the origin of IQE-‘droop’ in InGaN LEDs
journal, May 2009


Origin of efficiency droop in GaN-based light-emitting diodes
journal, October 2007


White light emitting diodes with super-high luminous efficacy
journal, August 2010


Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
journal, July 2010


Solid-state lighting: an energy-economics perspective
journal, August 2010


High performance thin-film flip-chip InGaN–GaN light-emitting diodes
journal, August 2006


COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As 1− x P x ) JUNCTIONS
journal, December 1962


Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
journal, April 2003


Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes
journal, December 2012


Dislocation Related Issues in the Degradation of GaN-Based Laser Diodes
journal, November 2004


Four-color laser white illuminant demonstrating high color-rendering quality
journal, January 2011


Free-carrier absorption in nitrides from first principles
journal, June 2010


Microstructure and electronic properties of InGaN alloys
journal, November 2003


Luminescence properties of thick InGaN quantum-wells
journal, January 2009


Efficiency droop in nitride-based light-emitting diodes
journal, July 2010


Solid phase immiscibility in GaInN
journal, October 1996


Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
journal, May 2012


Solid-State Lighting: An Integrated Human Factors, Technology, and Economic Perspective
journal, July 2010


Solid-state lighting: lamps, chips, and materials for tomorrow
journal, May 2004


Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green
journal, January 2009


p ‐type conduction in Mg‐doped GaN and Al 0.08 Ga 0.92 N grown by metalorganic vapor phase epitaxy
journal, August 1994


Solid-State Light Sources Getting Smart
journal, May 2005


Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping
journal, March 2010


Recent results of blue and green InGaN laser diodes for laser projection
conference, February 2011


Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes
journal, July 2008


Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
journal, April 2013


Highly efficient all-nitride phosphor-converted white light emitting diode
journal, July 2005


New developments in green LEDs: New developments in green LEDs
journal, March 2009


Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
journal, July 2008


Thermal ionization energy of Si and Mg in AlGaN
journal, June 1998


Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
journal, March 2010


Assessment of various LED structure designs for high-current operation
journal, January 2009


High Power and High External Efficiency m -Plane InGaN Light Emitting Diodes
journal, February 2007


Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
journal, September 2010


Recombination coefficients of GaN-based laser diodes
journal, May 2011


Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
journal, April 2011


Auger recombination in InGaN measured by photoluminescence
journal, October 2007


Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
journal, February 2008


Gain comparison in polar and nonpolar\ssty{/} semipolar gallium-nitride-based laser diodes
journal, January 2012


Droop in III-nitrides: Comparison of bulk and injection contributions
journal, November 2010