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Title: Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene

Abstract

Colloidal nanocrystals (NCs) of lead chalcogenides are a promising class of tunable infrared materials for applications in devices such as photodetectors and solar cells. Such devices typically employ electronic materials in which charge carrier concentrations are manipulated through “doping;” however, persistent electronic doping of these NCs remains a challenge. Here, we demonstrate that heavily doped n-type PbSe and PbS NCs can be realized utilizing ground-state electron transfer from cobaltocene. This allows injecting up to eight electrons per NC into the band-edge state and maintaining the doping level for at least a month at room temperature. Doping is confirmed by inter- and intra-band optical absorption, as well as by carrier dynamics. Finally, FET measurements of doped NC films and the demonstration of a p-n diode provide additional evidence that the developed doping procedure allows for persistent incorporation of electrons into the quantum-confined NC states.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Advanced Solar Photophysics (CASP)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1382294
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Journal Article
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 3; Journal Issue: 1; Related Information: CASP partners with Los Alamos National Laboratory (lead); University of California, Irvine; University of Colorado; Colorado School of Mines; George Mason University; Los Alamos National Laboratory; University of Minnesota; National Renewable Energy Laboratory; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; solar (photovoltaic), solar (fuels), solid state lighting, bio-inspired, electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (scalable processing)

Citation Formats

Koh, Weon-kyu, Koposov, Alexey Y., Stewart, John T., Pal, Bhola N., Robel, Istvan, Pietryga, Jeffrey M., and Klimov, Victor I. Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene. United States: N. p., 2013. Web. doi:10.1038/srep02004.
Koh, Weon-kyu, Koposov, Alexey Y., Stewart, John T., Pal, Bhola N., Robel, Istvan, Pietryga, Jeffrey M., & Klimov, Victor I. Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene. United States. doi:10.1038/srep02004.
Koh, Weon-kyu, Koposov, Alexey Y., Stewart, John T., Pal, Bhola N., Robel, Istvan, Pietryga, Jeffrey M., and Klimov, Victor I. Tue . "Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene". United States. doi:10.1038/srep02004.
@article{osti_1382294,
title = {Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene},
author = {Koh, Weon-kyu and Koposov, Alexey Y. and Stewart, John T. and Pal, Bhola N. and Robel, Istvan and Pietryga, Jeffrey M. and Klimov, Victor I.},
abstractNote = {Colloidal nanocrystals (NCs) of lead chalcogenides are a promising class of tunable infrared materials for applications in devices such as photodetectors and solar cells. Such devices typically employ electronic materials in which charge carrier concentrations are manipulated through “doping;” however, persistent electronic doping of these NCs remains a challenge. Here, we demonstrate that heavily doped n-type PbSe and PbS NCs can be realized utilizing ground-state electron transfer from cobaltocene. This allows injecting up to eight electrons per NC into the band-edge state and maintaining the doping level for at least a month at room temperature. Doping is confirmed by inter- and intra-band optical absorption, as well as by carrier dynamics. Finally, FET measurements of doped NC films and the demonstration of a p-n diode provide additional evidence that the developed doping procedure allows for persistent incorporation of electrons into the quantum-confined NC states.},
doi = {10.1038/srep02004},
journal = {Scientific Reports},
issn = {2045-2322},
number = 1,
volume = 3,
place = {United States},
year = {2013},
month = {6}
}

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