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Title: Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

Authors:
; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1382278
DOE Contract Number:  
SC0001088
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 102; Journal Issue: 19; Related Information: CE partners with Massachusetts Institute of Technology (lead); Brookhaven National Laboratory; Harvard University; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solid state lighting, photosynthesis (natural and artificial), charge transport, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Baloch, Kamal H., Johnston-Peck, Aaron C., Kisslinger, Kim, Stach, Eric A., and Gradečak, Silvija. Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold. United States: N. p., 2013. Web. doi:10.1063/1.4807122.
Baloch, Kamal H., Johnston-Peck, Aaron C., Kisslinger, Kim, Stach, Eric A., & Gradečak, Silvija. Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold. United States. doi:10.1063/1.4807122.
Baloch, Kamal H., Johnston-Peck, Aaron C., Kisslinger, Kim, Stach, Eric A., and Gradečak, Silvija. Mon . "Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold". United States. doi:10.1063/1.4807122.
@article{osti_1382278,
title = {Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold},
author = {Baloch, Kamal H. and Johnston-Peck, Aaron C. and Kisslinger, Kim and Stach, Eric A. and Gradečak, Silvija},
abstractNote = {},
doi = {10.1063/1.4807122},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 102,
place = {United States},
year = {2013},
month = {5}
}

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