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Title: Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1382275
DOE Contract Number:  
SC0001009
Resource Type:
Journal Article
Journal Name:
Surface Science
Additional Journal Information:
Journal Volume: 606; Journal Issue: 21-22; Related Information: CEEM partners with the University of California, Santa Barbara (lead); Purdue University; Los Alamos National Laboratory; National Renewable Energy Laboratory; Journal ID: ISSN 0039-6028
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Zhang, Lixin, McMahon, W. E., Liu, Y., Cai, Y., Xie, M. H., Wang, N., and Zhang, S. B. Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials. United States: N. p., 2012. Web. doi:10.1016/j.susc.2012.07.018.
Zhang, Lixin, McMahon, W. E., Liu, Y., Cai, Y., Xie, M. H., Wang, N., & Zhang, S. B. Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials. United States. doi:10.1016/j.susc.2012.07.018.
Zhang, Lixin, McMahon, W. E., Liu, Y., Cai, Y., Xie, M. H., Wang, N., and Zhang, S. B. Thu . "Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials". United States. doi:10.1016/j.susc.2012.07.018.
@article{osti_1382275,
title = {Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials},
author = {Zhang, Lixin and McMahon, W. E. and Liu, Y. and Cai, Y. and Xie, M. H. and Wang, N. and Zhang, S. B.},
abstractNote = {},
doi = {10.1016/j.susc.2012.07.018},
journal = {Surface Science},
issn = {0039-6028},
number = 21-22,
volume = 606,
place = {United States},
year = {2012},
month = {11}
}