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Title: Strong light-extraction enhancement in GaInN light-emitting diodes patterned with TiO 2 micro-pillars with tapered sidewalls

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4756797· OSTI ID:1381701
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Research Organization:
Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1381701
Journal Information:
Applied Physics Letters, Vol. 101, Issue 14; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

References (8)

High performance thin-film flip-chip InGaN–GaN light-emitting diodes journal August 2006
III-nitride photonic-crystal light-emitting diodes with high extraction efficiency journal February 2009
Self-Assembled GaN:Mg Inverted Hexagonal Pyramids Formed Through a Photoelectrochemical Wet-Etching Process journal January 2005
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting journal June 2007
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening journal February 2004
Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns journal November 2005
Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection journal March 2007
Crystallographic wet chemical etching of GaN journal November 1998

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Related Subjects

solar (photovoltaic)
solid state lighting
phonons
materials and chemistry by design
optics
synthesis (novel materials)