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Title: Enhanced Lithiation of Doped 6H Silicon Carbide (0001) via High Temperature Vacuum Growth of Epitaxial Graphene

Journal Article · · Journal of Physical Chemistry. C
DOI:https://doi.org/10.1021/jp307220y· OSTI ID:1381606

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Electrical Energy Storage (CEES)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
AC02-06CH11357
OSTI ID:
1381606
Journal Information:
Journal of Physical Chemistry. C, Vol. 116, Issue 39; Related Information: CEES partners with Argonne National Laboratory (lead); University of Illinois, Urbana-Champaign; Northwest University; ISSN 1932-7447
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English