Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes

Armstrong, A.; Henry, T. A.; Koleske, D. D.; Crawford, M. H.; Westlake, K. R.; Lee, S. R.

doi:10.1063/1.4759003

Title: Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes

Journal Article · Mon Oct 15 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4759003· OSTI ID:1381552

Armstrong, A.; Henry, T. A.; Koleske, D. D.; Crawford, M. H.; Westlake, K. R.; Lee, S. R.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1381552

Journal Information:: Applied Physics Letters, Vol. 101, Issue 16; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

References (11)

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes Schubert, Martin F.; Chhajed, Sameer; Kim, Jong Kyu Applied Physics Letters, Vol. 91, Issue 23 https://doi.org/10.1063/1.2822442	journal	December 2007
Defect related issues in the “current roll-off” in InGaN based light emitting diodes Monemar, B.; Sernelius, B. E. Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2801704	journal	October 2007
Measurement of deep-level spatial distributions Brotherton, S. D. Solid-State Electronics, Vol. 19, Issue 4 https://doi.org/10.1016/0038-1101(76)90033-2	journal	April 1976
The role of threading dislocations in the physical properties of GaN and its alloys Speck, J. S.; Rosner, S. J. Physica B: Condensed Matter, Vol. 273-274 https://doi.org/10.1016/S0921-4526(99)00399-3	journal	December 1999
A method to determine deep level profiles in highly compensated, wide band gap semiconductors Armstrong, A.; Arehart, A. R.; Ringel, S. A. Journal of Applied Physics, Vol. 97, Issue 8 https://doi.org/10.1063/1.1862321	journal	April 2005
Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities Dai, Q.; Schubert, M. F.; Kim, M. H. Applied Physics Letters, Vol. 94, Issue 11 https://doi.org/10.1063/1.3100773	journal	March 2009
Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors Pässler, Roland Journal of Applied Physics, Vol. 96, Issue 1 https://doi.org/10.1063/1.1753076	journal	July 2004
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers Lee, S. R.; West, A. M.; Allerman, A. A. Applied Physics Letters, Vol. 86, Issue 24 https://doi.org/10.1063/1.1947367	journal	June 2005
High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates Hashimoto, S.; Yoshizumi, Y.; Tanabe, T. Journal of Crystal Growth, Vol. 298 https://doi.org/10.1016/j.jcrysgro.2006.10.117	journal	January 2007
Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes Armstrong, A.; Henry, T. A.; Koleske, D. D. Optics Express, Vol. 20, Issue S6 https://doi.org/10.1364/OE.20.00A812	journal	January 2012
Deep acceptors trapped at threading-edge dislocations in GaN Elsner, J.; Jones, R.; Heggie, M. I. Physical Review B, Vol. 58, Issue 19 https://doi.org/10.1103/PhysRevB.58.12571	journal	November 1998

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