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Title: Time-resolved photoluminescence of lithographically defined quantum dots fabricated by electron beam lithography and wet chemical etching

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Energy Nanoscience (CEN)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1381351
DOE Contract Number:  
SC0001013
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 109; Journal Issue: 12; Related Information: CEN partners with University of Southern California (lead); University of Illinois, Urbana-Champaign; University of Michigan; University of Virginia; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solar (fuels), solid state lighting, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Verma, V. B., Stevens, Martin J., Silverman, K. L., Dias, N. L., Garg, A., Coleman, J. J., and Mirin, R. P. Time-resolved photoluminescence of lithographically defined quantum dots fabricated by electron beam lithography and wet chemical etching. United States: N. p., 2011. Web. doi:10.1063/1.3599889.
Verma, V. B., Stevens, Martin J., Silverman, K. L., Dias, N. L., Garg, A., Coleman, J. J., & Mirin, R. P. Time-resolved photoluminescence of lithographically defined quantum dots fabricated by electron beam lithography and wet chemical etching. United States. doi:10.1063/1.3599889.
Verma, V. B., Stevens, Martin J., Silverman, K. L., Dias, N. L., Garg, A., Coleman, J. J., and Mirin, R. P. Wed . "Time-resolved photoluminescence of lithographically defined quantum dots fabricated by electron beam lithography and wet chemical etching". United States. doi:10.1063/1.3599889.
@article{osti_1381351,
title = {Time-resolved photoluminescence of lithographically defined quantum dots fabricated by electron beam lithography and wet chemical etching},
author = {Verma, V. B. and Stevens, Martin J. and Silverman, K. L. and Dias, N. L. and Garg, A. and Coleman, J. J. and Mirin, R. P.},
abstractNote = {},
doi = {10.1063/1.3599889},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 109,
place = {United States},
year = {2011},
month = {6}
}

Works referenced in this record:

High density patterned quantum dot arrays fabricated by electron beam lithography and wet chemical etching
journal, September 2008

  • Verma, V. B.; Coleman, J. J.
  • Applied Physics Letters, Vol. 93, Issue 11
  • DOI: 10.1063/1.2981207

Many-body theory of carrier capture and relaxation in semiconductor quantum-dot lasers
journal, June 2004


Efficient Carrier Relaxation Mechanism in InGaAs/GaAs Self-Assembled Quantum Dots Based on the Existence of Continuum States
journal, May 1999


A Quantum Dot Single-Photon Turnstile Device
journal, December 2000


Intrinsic mechanism for the poor luminescence properties of quantum-box systems
journal, November 1991


Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation
journal, May 2001