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Title: Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3703467· OSTI ID:1381186

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
SC0000957
OSTI ID:
1381186
Journal Information:
Journal of Applied Physics, Vol. 111, Issue 7; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

References (12)

Electron capture cross sections of InAs∕GaAs quantum dots journal October 2004
Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels journal June 1997
Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells journal November 2008
Effect of strain compensation on quantum dot enhanced GaAs solar cells journal March 2008
Studies of the photocurrent in quantum dot solar cells by the application of a new theoretical model journal November 2005
Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells journal May 2012
Intermediate-Band Solar Cells Employing Quantum Dots Embedded in an Energy Fence Barrier journal January 2007
Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell journal September 2010
Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell journal December 2006
Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots journal March 1996
450 meV hole localization in GaSb/GaAs quantum dots journal April 2003
Coulomb Charging Effect in Self-Assembled Ge Quantum Dots Studied by Admittance Spectroscopy journal April 1998