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Title: Band structure of strain-balanced GaAsBi/GaAsN superlattices on GaAs

Authors:
;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1380673
DOE Contract Number:  
SC0000957
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 83; Journal Issue: 19; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solar (thermal), phonons, thermal conductivity, thermoelectric, electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly)

Citation Formats

Hwang, J., and Phillips, J. D. Band structure of strain-balanced GaAsBi/GaAsN superlattices on GaAs. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.83.195327.
Hwang, J., & Phillips, J. D. Band structure of strain-balanced GaAsBi/GaAsN superlattices on GaAs. United States. doi:10.1103/PhysRevB.83.195327.
Hwang, J., and Phillips, J. D. Sun . "Band structure of strain-balanced GaAsBi/GaAsN superlattices on GaAs". United States. doi:10.1103/PhysRevB.83.195327.
@article{osti_1380673,
title = {Band structure of strain-balanced GaAsBi/GaAsN superlattices on GaAs},
author = {Hwang, J. and Phillips, J. D.},
abstractNote = {},
doi = {10.1103/PhysRevB.83.195327},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 19,
volume = 83,
place = {United States},
year = {2011},
month = {5}
}

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