On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Dai, Qi; Shan, Qifeng; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Kim, Min-Ho; Park, Yongjo

doi:10.1063/1.3544584

Title: On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Journal Article · Mon Jan 17 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3544584· OSTI ID:1380523

Dai, Qi; Shan, Qifeng; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Kim, Min-Ho; Park, Yongjo

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1380523

Journal Information:: Applied Physics Letters, Vol. 98, Issue 3; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

References (14)

Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics Ryu, H. Y.; Ha, K. H.; Son, J. K. Applied Physics Letters, Vol. 93, Issue 1 https://doi.org/10.1063/1.2956413	journal	July 2008
Measurement of electron overflow in 450 nm InGaN light-emitting diode structures Vampola, Kenneth J.; Iza, Michael; Keller, Stacia Applied Physics Letters, Vol. 94, Issue 6 https://doi.org/10.1063/1.3081059	journal	February 2009
Auger recombination in InGaN measured by photoluminescence Shen, Y. C.; Mueller, G. O.; Watanabe, S. Applied Physics Letters, Vol. 91, Issue 14 https://doi.org/10.1063/1.2785135	journal	October 2007
Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes Zhang, M.; Bhattacharya, P.; Singh, J. Applied Physics Letters, Vol. 95, Issue 20 https://doi.org/10.1063/1.3266520	journal	November 2009
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers Xie, Jinqiao; Ni, Xianfeng; Fan, Qian Applied Physics Letters, Vol. 93, Issue 12 https://doi.org/10.1063/1.2988324	journal	September 2008
Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis David, Aurélien; Grundmann, Michael J. Applied Physics Letters, Vol. 96, Issue 10 https://doi.org/10.1063/1.3330870	journal	March 2010
Performance of High-Power AlInGaN Light Emitting Diodes Kim, A. Y.; G�tz, W.; Steigerwald, D. A. physica status solidi (a), Vol. 188, Issue 1 https://doi.org/10.1002/1521-396X(200111)188:1<15::AID-PSSA15>3.0.CO;2-5	journal	November 2001
Origin of efficiency droop in GaN-based light-emitting diodes Kim, Min-Ho; Schubert, Martin F.; Dai, Qi Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2800290	journal	October 2007
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2 Gardner, N. F.; Müller, G. O.; Shen, Y. C. Applied Physics Letters, Vol. 91, Issue 24 https://doi.org/10.1063/1.2807272	journal	December 2007
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes Hader, J.; Moloney, J. V.; Koch, S. W. Applied Physics Letters, Vol. 96, Issue 22 https://doi.org/10.1063/1.3446889	journal	May 2010
Rate equation analysis of efficiency droop in InGaN light-emitting diodes Ryu, Han-Youl; Kim, Hyun-Sung; Shim, Jong-In Applied Physics Letters, Vol. 95, Issue 8 https://doi.org/10.1063/1.3216578	journal	August 2009
Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes Dai, Qi; Shan, Qifeng; Wang, Jing Applied Physics Letters, Vol. 97, Issue 13 https://doi.org/10.1063/1.3493654	journal	September 2010
Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes David, Aurélien; Grundmann, Michael J. Applied Physics Letters, Vol. 97, Issue 3 https://doi.org/10.1063/1.3462916	journal	July 2010
On the importance of radiative and Auger losses in GaN-based quantum wells Hader, J.; Moloney, J. V.; Pasenow, B. Applied Physics Letters, Vol. 92, Issue 26 https://doi.org/10.1063/1.2953543	journal	June 2008

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Title: On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

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