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Title: High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1380403
DOE Contract Number:  
SC0001009
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 98; Journal Issue: 13; Related Information: CEEM partners with the University of California, Santa Barbara (lead); Purdue University; Los Alamos National Laboratory; National Renewable Energy Laboratory; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Lang, J. R., Neufeld, C. J., Hurni, C. A., Cruz, S. C., Matioli, E., Mishra, U. K., and Speck, J. S. High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy. United States: N. p., 2011. Web. doi:10.1063/1.3575563.
Lang, J. R., Neufeld, C. J., Hurni, C. A., Cruz, S. C., Matioli, E., Mishra, U. K., & Speck, J. S. High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy. United States. doi:10.1063/1.3575563.
Lang, J. R., Neufeld, C. J., Hurni, C. A., Cruz, S. C., Matioli, E., Mishra, U. K., and Speck, J. S. Mon . "High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy". United States. doi:10.1063/1.3575563.
@article{osti_1380403,
title = {High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy},
author = {Lang, J. R. and Neufeld, C. J. and Hurni, C. A. and Cruz, S. C. and Matioli, E. and Mishra, U. K. and Speck, J. S.},
abstractNote = {},
doi = {10.1063/1.3575563},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 98,
place = {United States},
year = {2011},
month = {3}
}

Works referenced in this record:

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p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
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