skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1380021
Grant/Contract Number:  
FG02-09ER46554
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 119; Journal Issue: 10; Related Information: CHORUS Timestamp: 2017-09-07 15:41:29; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Wu, Yu-Ning, Zhang, X. -G., and Pantelides, Sokrates T. Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors. United States: N. p., 2017. Web. doi:10.1103/PhysRevLett.119.105501.
Wu, Yu-Ning, Zhang, X. -G., & Pantelides, Sokrates T. Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors. United States. doi:10.1103/PhysRevLett.119.105501.
Wu, Yu-Ning, Zhang, X. -G., and Pantelides, Sokrates T. Thu . "Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors". United States. doi:10.1103/PhysRevLett.119.105501.
@article{osti_1380021,
title = {Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors},
author = {Wu, Yu-Ning and Zhang, X. -G. and Pantelides, Sokrates T.},
abstractNote = {},
doi = {10.1103/PhysRevLett.119.105501},
journal = {Physical Review Letters},
number = 10,
volume = 119,
place = {United States},
year = {Thu Sep 07 00:00:00 EDT 2017},
month = {Thu Sep 07 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevLett.119.105501

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

Save / Share: