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Title: Wide bandgap BaSnO 3 films with room temperature conductivity exceeding 10 4 S cm -1

Abstract

Wide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of sign ificant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO 3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 10 4 S cm -1 . Significantly, these films show room temperature mobilities up to 120 cm 2 V -1 s -1 even at carrier concentrations above 3 × 10 20 cm -3 together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III-N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality.

Authors:
ORCiD logo [1];  [1];  [2];  [3];  [4]; ORCiD logo [2];  [1]
  1. Univ. of Minnesota, Minneapolis, MN (United States). Chemical Engineering and Materials Science
  2. Washington Univ., St. Louis, MO (United States). Dept. of Energy, Environmental, and Chemical Engineering
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Nanyang Technological Univ. (Singapore). Energy Research Inst.
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Materials Science and Engineering
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1379840
Grant/Contract Number:  
AC02-05CH11231; AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; electronic devices; semiconductors; superconducting devices

Citation Formats

Prakash, Abhinav, Xu, Peng, Faghaninia, Alireza, Shukla, Sudhanshu, Ager, Joel W., Lo, Cynthia S., and Jalan, Bharat. Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm-1. United States: N. p., 2017. Web. doi:10.1038/ncomms15167.
Prakash, Abhinav, Xu, Peng, Faghaninia, Alireza, Shukla, Sudhanshu, Ager, Joel W., Lo, Cynthia S., & Jalan, Bharat. Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm-1. United States. doi:10.1038/ncomms15167.
Prakash, Abhinav, Xu, Peng, Faghaninia, Alireza, Shukla, Sudhanshu, Ager, Joel W., Lo, Cynthia S., and Jalan, Bharat. Fri . "Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm-1". United States. doi:10.1038/ncomms15167. https://www.osti.gov/servlets/purl/1379840.
@article{osti_1379840,
title = {Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm-1},
author = {Prakash, Abhinav and Xu, Peng and Faghaninia, Alireza and Shukla, Sudhanshu and Ager, Joel W. and Lo, Cynthia S. and Jalan, Bharat},
abstractNote = {Wide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of sign ificant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO 3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 10 4 S cm -1 . Significantly, these films show room temperature mobilities up to 120 cm 2 V -1 s -1 even at carrier concentrations above 3 × 10 20 cm -3 together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III-N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality.},
doi = {10.1038/ncomms15167},
journal = {Nature Communications},
number = ,
volume = 8,
place = {United States},
year = {Fri May 05 00:00:00 EDT 2017},
month = {Fri May 05 00:00:00 EDT 2017}
}

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Cited by: 19 works
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