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Title: Elemental Topological Dirac Semimetal: α -Sn on InSb(111)

Abstract

Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. We have observed such bulk Dirac cones in epitaxially grown α-Sn films on InSb(111), the first such TDS system realized in an elemental form, using angle-resolved photoemission spectroscopy. First-principles calculations confirm that epitaxial strain is key to the formation of the TDS phase. A phase diagram is established that connects the 3D TDS phase through a singular point of a zero-gap semimetal phase to a topological insulator phase. The nature of the Dirac cone crosses over from 3D to 2D as the film thickness is reduced.

Authors:
 [1];  [2];  [3];  [1];  [4];  [5];  [6];  [6];  [7];  [3];  [7];  [8];  [7];  [7];  [9]
  1. Univ. of Illinois, Urbana-Champaign, IL (United States). Dept. of Physics, Frederick Seitz Materials Research Lab.; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source
  2. Inst. of Atomic and Molecular Sciences, Taipei (Taiwan)
  3. Univ. of Toronto, ON (Canada). Dept. of Physics
  4. Univ. of Illinois, Urbana-Champaign, IL (United States). Dept. of Physics, Frederick Seitz Materials Research Lab.; Univ. of Science and Technology, Nanjing (China). College of Science
  5. European Synchrotron Radiation Facility (ESRF), Grenoble (France). Structure of Materials Group
  6. Univ. of Illinois, Urbana-Champaign, IL (United States). Dept. of Physics, Frederick Seitz Materials Research Lab.
  7. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source
  8. Inst. of Atomic and Molecular Sciences, Taipei (Taiwan); Georgia Inst. of Technology, Atlanta, GA (United States). School of Physics; National Taiwan Univ., Taipei (Taiwan). Dept. of Physics
  9. Univ. of Illinois, Urbana-Champaign, IL (United States). Dept. of Physics, Frederick Seitz Materials Research Lab.; National Taiwan Univ., Taipei (Taiwan). Dept. of Physics
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1379797
Alternate Identifier(s):
OSTI ID: 1349973
Grant/Contract Number:  
AC02-05CH11231; FG02-97ER45632; FG02-07ER46383
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 118; Journal Issue: 14; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Yige, Chen, Peng, Wang, Xiaoxiong, Dejoie, Catherine, Wong, Man-Hong, Hlevyack, Joseph Andrew, Ryu, Hyejin, Kee, Hae-Young, Tamura, Nobumichi, Chou, Mei-Yin, Hussain, Zahid, Mo, Sung-Kwan, and Chiang, Tai-Chang. Elemental Topological Dirac Semimetal: α -Sn on InSb(111). United States: N. p., 2017. Web. doi:10.1103/PhysRevLett.118.146402.
Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Yige, Chen, Peng, Wang, Xiaoxiong, Dejoie, Catherine, Wong, Man-Hong, Hlevyack, Joseph Andrew, Ryu, Hyejin, Kee, Hae-Young, Tamura, Nobumichi, Chou, Mei-Yin, Hussain, Zahid, Mo, Sung-Kwan, & Chiang, Tai-Chang. Elemental Topological Dirac Semimetal: α -Sn on InSb(111). United States. doi:10.1103/PhysRevLett.118.146402.
Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Yige, Chen, Peng, Wang, Xiaoxiong, Dejoie, Catherine, Wong, Man-Hong, Hlevyack, Joseph Andrew, Ryu, Hyejin, Kee, Hae-Young, Tamura, Nobumichi, Chou, Mei-Yin, Hussain, Zahid, Mo, Sung-Kwan, and Chiang, Tai-Chang. Tue . "Elemental Topological Dirac Semimetal: α -Sn on InSb(111)". United States. doi:10.1103/PhysRevLett.118.146402. https://www.osti.gov/servlets/purl/1379797.
@article{osti_1379797,
title = {Elemental Topological Dirac Semimetal: α -Sn on InSb(111)},
author = {Xu, Cai-Zhi and Chan, Yang-Hao and Chen, Yige and Chen, Peng and Wang, Xiaoxiong and Dejoie, Catherine and Wong, Man-Hong and Hlevyack, Joseph Andrew and Ryu, Hyejin and Kee, Hae-Young and Tamura, Nobumichi and Chou, Mei-Yin and Hussain, Zahid and Mo, Sung-Kwan and Chiang, Tai-Chang},
abstractNote = {Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. We have observed such bulk Dirac cones in epitaxially grown α-Sn films on InSb(111), the first such TDS system realized in an elemental form, using angle-resolved photoemission spectroscopy. First-principles calculations confirm that epitaxial strain is key to the formation of the TDS phase. A phase diagram is established that connects the 3D TDS phase through a singular point of a zero-gap semimetal phase to a topological insulator phase. The nature of the Dirac cone crosses over from 3D to 2D as the film thickness is reduced.},
doi = {10.1103/PhysRevLett.118.146402},
journal = {Physical Review Letters},
number = 14,
volume = 118,
place = {United States},
year = {Tue Apr 04 00:00:00 EDT 2017},
month = {Tue Apr 04 00:00:00 EDT 2017}
}

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Works referenced in this record:

Colloquium: Topological insulators
journal, November 2010


The electronic properties of graphene
journal, January 2009

  • Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.
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