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Title: KF post-deposition treatment of industrial Cu(In, Ga)(S, Se)2 thin-film surfaces: Modifying the chemical and electronic structure

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4998445· OSTI ID:1379465
 [1]; ORCiD logo [2];  [3];  [1];  [4];  [5];  [4]; ORCiD logo [5]
  1. Univ. of Nevada, Las Vegas (UNLV), Las Vegas, NV (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Univ. of Nevada, Las Vegas (UNLV), Las Vegas, NV (United States); Univ. of Hawaii at Manoa, Honolulu, HI (United States)
  4. STION, San Jose, CA (United States)
  5. Univ. of Nevada, Las Vegas (UNLV), Las Vegas, NV (United States); Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen (Germany); Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)

The chemical and electronic structures of industrial chalcopyrite photovoltaic absorbers after KF post-deposition treatment (KF-PDT) are investigated using electron spectroscopies to probe the occupied and unoccupied electronic states. In contrast to a variety of recent publications on the impact of KF-PDT, this study focuses on industrial Cu(In,Ga)(S,Se)2 absorbers that also contain sulfur at the surface. We find that the KF-PDT removes surface adsorbates and oxides and also observe a change in the S/Se ratio. Furthermore, the KF-PDT leads to a Cu reduction at the surface but to a much lower degree than the strongly Cu-depleted or even Cu-free surfaces reported for (non-industrial) sulfur-free Cu(In,Ga)Se2 absorbers. Furthermore, the valence band maximum at the surface is found at a lower energy compared to the untreated absorber, and the conduction band minimum is found at a higher energy, overall revealing a widening of the bandgap in the surface region.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SunShot Foundational Program to Advance Cell Efficiency (F-PACE); USDOE
Grant/Contract Number:
AC36-08GO28308; ZEJ-2-22082-0.1
OSTI ID:
1379465
Alternate ID(s):
OSTI ID: 1374925
Report Number(s):
NREL/JA-5K00-70059
Journal Information:
Applied Physics Letters, Vol. 111, Issue 7; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 17 works
Citation information provided by
Web of Science

References (24)

Potassium Postdeposition Treatment-Induced Band Gap Widening at Cu(In,Ga)Se 2 Surfaces – Reason for Performance Leap? journal December 2015
Efficiency enhancement of Cu(In,Ga)Se 2 thin-film solar cells by a post-deposition treatment with potassium fluoride : Efficiency enhancement of Cu(In,Ga)Se journal July 2013
Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells journal November 2013
Features of KF and NaF Postdeposition Treatments of Cu(In,Ga)Se 2 Absorbers for High Efficiency Thin Film Solar Cells journal August 2015
Properties of Cu(In,Ga)Se 2 solar cells with new record efficiencies up to 21.7% : Properties of Cu(In,Ga)Se journal December 2014
Unveiling the effects of post-deposition treatment with different alkaline elements on the electronic properties of CIGS thin film solar cells journal January 2014
Influence of Na and H2O on the surface properties of Cu(In,Ga)Se2 thin films journal September 1997
Compositional investigation of potassium doped Cu(In,Ga)Se 2 solar cells with efficiencies up to 20.8% : Compositional investigation of potassium doped Cu(In,Ga)Se journal February 2014
Effects of heavy alkali elements in Cu(In,Ga)Se 2 solar cells with efficiencies up to 22.6% journal July 2016
Defect formation in Cu(In,Ga)Se 2 thin films due to the presence of potassium during growth by low temperature co-evaporation process journal November 2013
Experimental indication for band gap widening of chalcopyrite solar cell absorbers after potassium fluoride treatment journal August 2014
Na‐induced effects on the electronic structure and composition of Cu(In,Ga)Se 2 thin‐film surfaces journal June 1996
Solar cell efficiency tables (version 48): Solar cell efficiency tables (version 48) journal June 2016
Localization of Na impurities at the buried CdS/Cu(In, Ga)Se2 heterojunction journal October 1999
On the role of Na and modifications to Cu(In,Ga)Se/sub 2/ absorber materials using thin-MF (M=Na, K, Cs) precursor layers [solar cells] conference January 1997
Surface modifications of Cu(In,Ga)S2 thin film solar cell absorbers by KCN and H2O2∕H2SO4 treatments journal July 2006
Fityk : a general-purpose peak fitting program journal September 2010
Summary of ISO/TC 201 Standard: VII ISO 15472 : 2001?surface chemical analysis?x-ray photoelectron spectrometers?calibration of energy scales journal January 2001
Self-limitation of Na content at the CdS/Cu(In,Ga)Se 2 solar cell heterojunction journal February 2000
Cu(In,Ga)Se$_{\bf 2}$ Thin-Film Solar Cells and Modules—A Boost in Efficiency Due to Potassium journal March 2015
Reduction of the ZnSe/GaAs(100) valence band offset by a Te interlayer journal March 2001
Enhanced Performance in Cu(In,Ga)Se<inline-formula><tex-math>$_{\bf 2}$</tex-math></inline-formula> Solar Cells Fabricated by the Two-Step Selenization Process With a Potassium Fluoride Postdeposition Treatment journal November 2014
Depth-resolved band gap in Cu(In,Ga)(S,Se)2 thin films journal December 2008
Effects of heavy alkali elements in Cu(In,Ga)Se2 solar cells with efficiencies up to 22.6% text January 2016

Cited By (6)

Surface and Interface Properties in Thin‐Film Solar Cells: Using Soft X‐rays and Electrons to Unravel the Electronic and Chemical Structure journal February 2019
Effect of Cu Content on Post‐Sulfurization of Cu(In,Ga)Se 2 Films and Corresponding Solar Cell Performance journal August 2019
Observation and manipulation of CIGSe phase formation in a two stage sequential process journal September 2019
Energy level alignment of Cu ( In , Ga ) ( S , Se ) 2 absorber compounds with In 2 S 3 , NaIn 5 S 8 , and CuIn 5 S 8 Cd-free buffer materials journal July 2019
Surface and Interface Properties in Thin-Film Solar Cells: Using Soft X-rays and Electrons to Unravel the Electronic and Chemical Structure text January 2019
Alkali Postdeposition Treatment-Induced Changes of the Chemical and Electronic Structure of Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers: A First-Principle Perspective journal December 2018