skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB 6

Abstract

Resonant x-ray emission spectroscopy was used to determine the pressure dependence of the f-electron occupancy in the Kondo insulator SmB6. Applied pressure reduces the f occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive activation energy gap and onset of magnetic order are not driven by stabilization of an integer valent state. In conclusion, over the entire pressure range, the material maintains a remarkably stable intermediate valence that can in principle support a nontrivial band structure.

Authors:
 [1];  [2];  [3];  [3];  [4];  [5];  [6]
  1. Univ. of Maryland, College Park, MD (United States); National Institute of Standards and Technology, Gaithersburg, MD (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Univ. of Maryland, College Park, MD (United States)
  3. Carnegie Inst. of Washington, Argonne, IL (United States)
  4. Columbia Univ., New York, NY (United States)
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  6. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1379284
Alternate Identifier(s):
OSTI ID: 1247246
Grant/Contract Number:  
AC02-05CH11231; NA0001974; FG02-99ER45775; AC02-06CH11357; AC52-07NA27344
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 116; Journal Issue: 15; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Butch, Nicholas P., Paglione, Johnpierre, Chow, Paul, Xiao, Yuming, Marianetti, Chris A., Booth, Corwin H., and Jeffries, Jason R. Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB6. United States: N. p., 2016. Web. doi:10.1103/PhysRevLett.116.156401.
Butch, Nicholas P., Paglione, Johnpierre, Chow, Paul, Xiao, Yuming, Marianetti, Chris A., Booth, Corwin H., & Jeffries, Jason R. Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB6. United States. https://doi.org/10.1103/PhysRevLett.116.156401
Butch, Nicholas P., Paglione, Johnpierre, Chow, Paul, Xiao, Yuming, Marianetti, Chris A., Booth, Corwin H., and Jeffries, Jason R. 2016. "Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB6". United States. https://doi.org/10.1103/PhysRevLett.116.156401. https://www.osti.gov/servlets/purl/1379284.
@article{osti_1379284,
title = {Pressure-Resistant Intermediate Valence in the Kondo Insulator SmB6},
author = {Butch, Nicholas P. and Paglione, Johnpierre and Chow, Paul and Xiao, Yuming and Marianetti, Chris A. and Booth, Corwin H. and Jeffries, Jason R.},
abstractNote = {Resonant x-ray emission spectroscopy was used to determine the pressure dependence of the f-electron occupancy in the Kondo insulator SmB6. Applied pressure reduces the f occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive activation energy gap and onset of magnetic order are not driven by stabilization of an integer valent state. In conclusion, over the entire pressure range, the material maintains a remarkably stable intermediate valence that can in principle support a nontrivial band structure.},
doi = {10.1103/PhysRevLett.116.156401},
url = {https://www.osti.gov/biblio/1379284}, journal = {Physical Review Letters},
issn = {0031-9007},
number = 15,
volume = 116,
place = {United States},
year = {2016},
month = {4}
}

Journal Article:

Citation Metrics:
Cited by: 9 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Topological Kondo Insulators
journal, March 2010


Temperature dependence of Sm valence in SmB 6 studied by X-ray absorption spectroscopy
journal, June 2009


Delocalization and occupancy effects of 5f orbitals in plutonium intermetallics using L3-edge resonant X-ray emission spectroscopy
journal, June 2014


Valence and magnetic ordering in intermediate valence compounds: TmSe versus SmB 6
journal, January 2006


Two-dimensional Fermi surfaces in Kondo insulator SmB 6
journal, December 2014


Sm B 6 : Kondo Insulator or Exotic Metal?
journal, February 1995


Elastic behavior under pressure of semiconducting SmS
journal, February 1984


Band Symmetries of Mixed-Valence Topological Insulator: SmB 6
journal, February 2015


Cubic Topological Kondo Insulators
journal, November 2013


Valence transition of samarium in hexaboride solid solutions Sm 1-xMxB6 (M = Yb 2+ , Sr2+ , La3+ , Y3+ , Th4+ )
journal, January 1980


A new method for determining the valence of lanthanide compounds: Lγ4 emission spectroscopy
journal, January 2013


Surface electronic structure of the topological Kondo-insulator candidate correlated electron system SmB6
journal, December 2013


Magnetotransport measurements of the surface states of samarium hexaboride using Corbino structures
journal, September 2015


Correlated Topological Insulators with Mixed Valence
journal, February 2013


Pressure-Induced Localization of 4 f Electrons in the Intermediate Valence Compound SmB 6
journal, December 2013


Polarity-Driven Surface Metallicity in SmB 6
journal, November 2013


Tuning Bulk and Surface Conduction in the Proposed Topological Kondo Insulator SmB 6
journal, March 2015


Low-temperature surface conduction in the Kondo insulator SmB 6
journal, November 2013


Topological Thouless pumping of ultracold fermions
journal, January 2016


Hybridization, Inter-Ion Correlation, and Surface States in the Kondo Insulator SmB 6
journal, February 2013


High-Pressure Ground State of SmB 6 : Electronic Conduction and Long Range Magnetic Order
journal, April 2005


Unified understanding of the valence transition in the rare-earth monochalcogenides under pressure
journal, March 2013


Structural and electronic transitions in the low-temperature, high-pressure phase of SmS
journal, June 2005


High-pressure structural anomalies and electronic transitions in the topological Kondo insulator SmB 6
journal, June 2015


Continuous and Discontinuous Semiconductor-Metal Transition in Samarium Monochalcogenides Under Pressure
journal, November 1970


Low-temperature magnetic fluctuations in the Kondo insulator SmB 6
journal, April 2014


Convergence Properties of the Nelder--Mead Simplex Method in Low Dimensions
journal, January 1998


Surface Hall Effect and Nonlocal Transport in SmB6: Evidence for Surface Conduction
journal, November 2013


Pressure-Induced Magnetic Order in Golden SmS
journal, February 2004


Raman scattering study of rare-earth hexaboride
journal, April 2005


X-ray-absorption near-edge structure study in mixed-valent samarium systems
journal, April 1990


Magnetic and Semiconducting Properties of Sm B 6
journal, February 1969


α γ transition in metallic Ce studied by resonant x-ray spectroscopies
journal, August 2004


Study of valence mixing in SmB 6 by x-ray photoelectron spectroscopy
journal, November 1976


Correlation between Bulk Thermodynamic Measurements and the Low-Temperature-Resistance Plateau in SmB 6
journal, July 2014


Direct study of the f-electron configuration in lanthanide systems
journal, January 2011


Heavy fermion semiconductors
journal, May 2000


Surface properties of SmB 6 from x-ray photoelectron spectroscopy
journal, November 2014


General behavior of chalcogenides of rare-earth metals in transition to the intermediate valence state under high pressures
journal, October 2014


Kondo Hybridization and the Origin of Metallic States at the (001) Surface of SmB 6
journal, December 2013


Anharmonic strain effects in crystals and mixed valence states
journal, April 1974


Interaction Driven Subgap Spin Exciton in the Kondo Insulator SmB 6
journal, January 2015


Observation of possible topological in-gap surface states in the Kondo insulator SmB6 by photoemission
journal, December 2013


Topological Kondo Insulators
journal, March 2016


Works referencing / citing this record:

Valence transition in topological Kondo insulator
journal, October 2019


Pressure-driven valence increase and metallization in the Kondo insulator Ce 3 Bi 4 Pt 3
journal, December 2019


Resonant inelastic x-ray scattering investigation of the crystal-field splitting of Sm 3 + in SmB 6
journal, December 2019


4 f Crystal Field Ground State of the Strongly Correlated Topological Insulator SmB 6
journal, January 2018


$4f$ Crystal Field Ground State of the Strongly Correlated Topological Insulator $SmB_{6}$
text, January 2018