Direct growth of single-crystalline III–V semiconductors on amorphous substrates

Chen, Kevin; Kapadia, Rehan; Harker, Audrey; Desai, Sujay; Seuk Kang, Jeong; Chuang, Steven; Tosun, Mahmut; Sutter-Fella, Carolin M.; Tsang, Michael; Zeng, Yuping; Kiriya, Daisuke; Hazra, Jubin; Madhvapathy, Surabhi Rao; Hettick, Mark; Chen, Yu-Ze; Mastandrea, James; Amani, Matin; Cabrini, Stefano; Chueh, Yu-Lun; Ager III, Joel W.; Chrzan, Daryl C.; Javey, Ali

doi:10.1038/ncomms10502

Title: Direct growth of single-crystalline III–V semiconductors on amorphous substrates

Journal Article · Wed Jan 27 00:00:00 EST 2016 · Nature Communications

DOI:https://doi.org/10.1038/ncomms10502· OSTI ID:1255546

Chen, Kevin ^[1]; Kapadia, Rehan ^[1]; Harker, Audrey ^[2]; Desai, Sujay ^[1]; Seuk Kang, Jeong ^[1]; Chuang, Steven ^[1]; Tosun, Mahmut ^[1]; Sutter-Fella, Carolin M. ^[1]; Tsang, Michael ^[1]; Zeng, Yuping ^[1]; Kiriya, Daisuke ^[1]; Hazra, Jubin ^[3]; Madhvapathy, Surabhi Rao ^[1]; Hettick, Mark ^[1]; Chen, Yu-Ze ^[4]; Mastandrea, James ^[2]; Amani, Matin ^[1]; Cabrini, Stefano ^[5]; Chueh, Yu-Lun ^[4]; Ager III, Joel W. ^[5] more »

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
Univ. of Southern California, Los Angeles, CA (United States)
National Tsing Hua University, Hsinchu (Taiwan)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-Vâ €™ s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-Vâ €™ s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO 2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-Vâ €™ s on application-specific substrates by direct growth.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1255546

Alternate ID(s):: OSTI ID: 1379051

Journal Information:: Nature Communications, Vol. 7; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 33 works

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Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C Hettick, Mark; Li, Hao; Lien, Der-Hsien Proceedings of the National Academy of Sciences, Vol. 117, Issue 2 https://doi.org/10.1073/pnas.1915786117	journal	December 2019

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