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Title: Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode

Abstract

The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.

Inventors:
; ; ; ; ;
Publication Date:
Research Org.:
The University of Kentucky Research Foundation, Lexington, KY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1378991
Patent Number(s):
9,755,023
Application Number:
13/630,875
Assignee:
The University of Kentucky Research Foundation CHO
DOE Contract Number:  
FG02-07ER46375
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Sep 28
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Menon, Madhu, Sheetz, Michael, Sunkara, Mahendra Kumar, Pendyala, Chandrashekhar, Sunkara, Swathi, and Jasinski, Jacek B. Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode. United States: N. p., 2017. Web.
Menon, Madhu, Sheetz, Michael, Sunkara, Mahendra Kumar, Pendyala, Chandrashekhar, Sunkara, Swathi, & Jasinski, Jacek B. Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode. United States.
Menon, Madhu, Sheetz, Michael, Sunkara, Mahendra Kumar, Pendyala, Chandrashekhar, Sunkara, Swathi, and Jasinski, Jacek B. Tue . "Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode". United States. doi:. https://www.osti.gov/servlets/purl/1378991.
@article{osti_1378991,
title = {Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode},
author = {Menon, Madhu and Sheetz, Michael and Sunkara, Mahendra Kumar and Pendyala, Chandrashekhar and Sunkara, Swathi and Jasinski, Jacek B.},
abstractNote = {The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 05 00:00:00 EDT 2017},
month = {Tue Sep 05 00:00:00 EDT 2017}
}

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Works referenced in this record:

Giant and composition-dependent optical band gap bowing in dilute GaSb1−xNx alloys
journal, April 2006

  • Belabbes, A.; Ferhat, M.; Zaoui, A.
  • Applied Physics Letters, Vol. 88, Issue 15, Article No. 152109
  • DOI: 10.1063/1.2196049