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Title: GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

Abstract

Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [3];  [3]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
  2. Yale University
  3. Hong Kong University of Science and Technology
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1378886
Report Number(s):
NREL/CP-5J00-67778
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC), 25-30 June 2017, Washington, DC
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; GaAs; solar cell; Si; silicon; photovoltaics

Citation Formats

Warren, Emily L, Jain, Nikhil, Tamboli, Adele C, Vaisman, Michelle, Li, Qiang, and Lau, Kei May. GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint. United States: N. p., 2017. Web.
Warren, Emily L, Jain, Nikhil, Tamboli, Adele C, Vaisman, Michelle, Li, Qiang, & Lau, Kei May. GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint. United States.
Warren, Emily L, Jain, Nikhil, Tamboli, Adele C, Vaisman, Michelle, Li, Qiang, and Lau, Kei May. Thu . "GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint". United States. https://www.osti.gov/servlets/purl/1378886.
@article{osti_1378886,
title = {GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint},
author = {Warren, Emily L and Jain, Nikhil and Tamboli, Adele C and Vaisman, Michelle and Li, Qiang and Lau, Kei May},
abstractNote = {Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {8}
}

Conference:
Other availability
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