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Title: Methodology to analyze charge collection efficiency degradation induced by MeV ions in semiconductor detectors.

Abstract

Abstract not provided.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1378846
Report Number(s):
SAND2016-8379C
646935
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 15th International Conference on Nuclear Microprobe technology and Applications held July 31 - August 5, 2016 in Lanzhou, China.
Country of Publication:
United States
Language:
English

Citation Formats

Vizkelethy, Gyorgy, Vittone, Ettore, Pastuovic, Seljko, and Simon, Aliz. Methodology to analyze charge collection efficiency degradation induced by MeV ions in semiconductor detectors.. United States: N. p., 2016. Web.
Vizkelethy, Gyorgy, Vittone, Ettore, Pastuovic, Seljko, & Simon, Aliz. Methodology to analyze charge collection efficiency degradation induced by MeV ions in semiconductor detectors.. United States.
Vizkelethy, Gyorgy, Vittone, Ettore, Pastuovic, Seljko, and Simon, Aliz. Mon . "Methodology to analyze charge collection efficiency degradation induced by MeV ions in semiconductor detectors.". United States. doi:. https://www.osti.gov/servlets/purl/1378846.
@article{osti_1378846,
title = {Methodology to analyze charge collection efficiency degradation induced by MeV ions in semiconductor detectors.},
author = {Vizkelethy, Gyorgy and Vittone, Ettore and Pastuovic, Seljko and Simon, Aliz},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Aug 01 00:00:00 EDT 2016},
month = {Mon Aug 01 00:00:00 EDT 2016}
}

Conference:
Other availability
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