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Title: Methodology to analyze charge collection efficiency degradation induced by MeV ions in semiconductor detectors.

Abstract

Abstract not provided.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1378846
Report Number(s):
SAND2016-8379C
646935
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 15th International Conference on Nuclear Microprobe technology and Applications held July 31 - August 5, 2016 in Lanzhou, China.
Country of Publication:
United States
Language:
English

Citation Formats

Vizkelethy, Gyorgy, Vittone, Ettore, Pastuovic, Seljko, and Simon, Aliz. Methodology to analyze charge collection efficiency degradation induced by MeV ions in semiconductor detectors.. United States: N. p., 2016. Web.
Vizkelethy, Gyorgy, Vittone, Ettore, Pastuovic, Seljko, & Simon, Aliz. Methodology to analyze charge collection efficiency degradation induced by MeV ions in semiconductor detectors.. United States.
Vizkelethy, Gyorgy, Vittone, Ettore, Pastuovic, Seljko, and Simon, Aliz. 2016. "Methodology to analyze charge collection efficiency degradation induced by MeV ions in semiconductor detectors.". United States. doi:. https://www.osti.gov/servlets/purl/1378846.
@article{osti_1378846,
title = {Methodology to analyze charge collection efficiency degradation induced by MeV ions in semiconductor detectors.},
author = {Vizkelethy, Gyorgy and Vittone, Ettore and Pastuovic, Seljko and Simon, Aliz},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 8
}

Conference:
Other availability
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  • This study investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and themore » charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.« less
  • The development of improved semiconductor radiation detectors would be facilitated by a quantitative model that predicts the performance of these detectors as a function of material characteristics and device operating parameters. An accurate prediction of the pulse height spectrum from a radiation detector can be made if both the noise and the charge collection properties of the detector are understood. The noise characteristics of semiconductor radiation detectors have been extensively studied. The effect of noise can be closely simulated by convoluting the noise-free pulse height spectrum with a Gaussian function. Distortion of semiconductor detector's pulse height spectrum from charge collectionmore » effects is more complex than the effects of noise and is more difficult to predict. To compute these distortions it is necessary to know how the charge collection efficiency {eta} varies as a function of position within the detector x. These effects are shown. This problem has been previously solved for planar detectors with a constant electric field, for the case of spherical detectors, and for coaxial detectors. In this paper the authors describe a more general solution to the charge collection problem which includes the case of a non-constant electric field in a planar geometry.« less
  • Cadmium Zinc Telluride is an emerging material for room temperature radiation detectors. In order to optimize the performance of these detectors, it is important to determine how the electronic properties of CZT are related to the presence of impurities and defects that are introduced during the crystal growth and detector fabrication. At the Sandia microbeam facility IBICC and Time Resolved IBICC (TRIBICC) were used to image electronic properties of various CZT detectors. Two-dimensional areal maps of charge collection efficiency were deduced from the measurements. In order to determine radiation damage to the detectors, we measured the deterioration of the IBICCmore » signal as the function of dose. A model to explain quantitatively the pattern observed in the charge collection efficiency maps of the damaged detectors has been developed and will be discussed in the paper.« less
  • A new analytical, one dimensional method to obtain the induced current shapes and simulation of chasrge shapes for p{sup +} {minus}n{minus}n{sup +} silicon detectors in the case of minimum ionization particle has been developed here. jExact solutions have been found for both electron and hole current shapes. Simulations of induced charge shapes of detectors have also been given. The results of this work are consistent with the earlier work where a semi-analytical method had been used.